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pro vyhledávání: '"Eric C. T. Harley"'
Autor:
Eric C. T. Harley, Z. Zhu, Judson R. Holt, Matthew W. Stoker, R. Takalkar, L. Black, Rainer Loesing, A. Chakravarti, F. Yang, Dominic J. Schepis, James Chingwei Li, Xiaolin Chen, R. Murphy, Anita Madan, Thomas N. Adam, Abhishek Dube
Publikováno v:
ECS Transactions. 28:63-71
Uniaxial tensile strain in the channel enhances electron mobility and hence the drive current in an N-type field-effect transistor (NFET). For enhancement of NFET drive current via channel strain, the incorporation of embedded silicon carbon (eSi:C)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3cbe71f67a20208ceb5421c37d5d386
https://doi.org/10.1149/1.3375589
https://doi.org/10.1149/1.3375589
