Real-time dynamic single-molecule protein sequencing on an integrated semiconductor device

Autor: Brian D. Reed, Michael J. Meyer, Valentin Abramzon, Omer Ad, Pat Adcock, Faisal R. Ahmad, Gün Alppay, James A. Ball, James Beach, Dominique Belhachemi, Anthony Bellofiore, Michael Bellos, Juan Felipe Beltrán, Andrew Betts, Mohammad Wadud Bhuiya, Kristin Blacklock, Robert Boer, David Boisvert, Norman D. Brault, Aaron Buxbaum, Steve Caprio, Changhoon Choi, Thomas D. Christian, Robert Clancy, Joseph Clark, Thomas Connolly, Kathren Fink Croce, Richard Cullen, Mel Davey, Jack Davidson, Mohamed M. Elshenawy, Michael Ferrigno, Daniel Frier, Saketh Gudipati, Stephanie Hamill, Zhaoyu He, Sharath Hosali, Haidong Huang, Le Huang, Ali Kabiri, Gennadiy Kriger, Brittany Lathrop, An Li, Peter Lim, Stephen Liu, Feixiang Luo, Caixia Lv, Xiaoxiao Ma, Evan McCormack, Michele Millham, Roger Nani, Manjula Pandey, John Parillo, Gayatri Patel, Douglas H. Pike, Kyle Preston, Adeline Pichard-Kostuch, Kyle Rearick, Todd Rearick, Marco Ribezzi-Crivellari, Gerard Schmid, Jonathan Schultz, Xinghua Shi, Badri Singh, Nikita Srivastava, Shannon F. Stewman, TR Thurston, T. R. Thurston, Philip Trioli, Jennifer Tullman, Xin Wang, Yen-Chih Wang, Eric A. G. Webster, Zhizhuo Zhang, Jorge Zuniga, Smita S. Patel, Andrew D. Griffiths, Antoine M. van Oijen, Michael McKenna, Matthew D. Dyer, Jonathan M. Rothberg

Publikováno v: Science. 378:186-192

Studies of the proteome would benefit greatly from methods to directly sequence and digitally quantify proteins and detect posttranslational modifications with single-molecule sensitivity. Here, we demonstrate single-molecule protein sequencing using

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6d3367086ac787e208c4c79a68cbb83f
https://doi.org/10.1126/science.abo7651

$1.5\mu \mathrm{m}$ Dual Conversion Gain, Backside Illuminated Image Sensor Using Stacked Pixel Level Connections with 13ke-Full-Well Capacitance and 0.8e-Noise

Autor: Kelvin Ai, Xiang Zhao, Lindsay A. Grant, Eric A. G. Webster, Vincent Venezia, Duli Mao, Zhiqiang Lin, Alan Chih-Wei Hsiung, Armin Yazdani

Publikováno v: 2018 IEEE International Electron Devices Meeting (IEDM).

A $1.5\mu \mathrm{m}$ pixel size, 8 mega pixel density, dual conversion gain (DCG), back side illuminated CMOS image sensor (CIS) is described having a linear full-well capacity (FWC) of 13ke- and total noise of 0.8e-RMS at 8x gain. The sensor adopts

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b7f8b3422fed97d9745cd4c8a5f63a24
https://doi.org/10.1109/iedm.2018.8614484

A TCAD and Spectroscopy Study of Dark Count Mechanisms in Single-Photon Avalanche Diodes

Autor: Robert Henderson, Eric A. G. Webster

Publikováno v: Webster, E A G & Henderson, R 2013, ' A TCAD and Spectroscopy Study of Dark Count Mechanisms in Single-Photon Avalanche Diodes ', IEEE Transactions on Electron Devices, vol. 60, no. 12, pp. 4014-4019 .

—It is shown through dark count rate spectroscopy(DCRS) and TCAD-simulations that in single-photon avalanchediodes (SPADs), the majority of low dark count rate (DCR)devices in modern CMOS arrays are free of deep-level trapsand that DCR can therefor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f757ffd47f1353b946229b2e1f07d96
https://doi.org/10.1109/ted.2013.2285163

Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology

Autor: Eric A. G. Webster, Lindsay A. Grant, Robert Henderson, J. Richardson

Publikováno v: IEEE Transactions on Electron Devices. 58:2028-2035

Single-photon avalanche photodiodes (SPADs) operating in Geiger mode offer exceptional time resolution and optical sensitivity. Implementation in modern nanometer-scale complementary metal-oxide-semiconductor (CMOS) technologies to create dense high-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d3fd96eafde2d0930b65a50a50f1ffb8
https://doi.org/10.1109/ted.2011.2141138

A Dual-Junction Single-Photon Avalanche Diode in 130-nm CMOS Technology

Autor: Eric A. G. Webster, L. Grant, Robert Henderson

Publikováno v: IEEE Electron Device Letters. 34:429-431

A dual-junction single-photon avalanche diode structure is reported in a 130-nm low-voltage CMOS technology. The device comprises two stacked avalanche multiplication regions with virtual guard ring constructions. An 8.6- μm-diameter p-well is place

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::171a24a4f33e5302a030a63a4e4b2d62
https://doi.org/10.1109/led.2012.2236816