Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Eri Uesugi"'
Autor:
Takaki Uchiyama, Hidenori Goto, Eri Uesugi, Akihisa Takai, Lei Zhi, Akari Miura, Shino Hamao, Ritsuko Eguchi, Hiromi Ota, Kunihisa Sugimoto, Akihiko Fujiwara, Fumihiko Matsui, Koji Kimura, Kouichi Hayashi, Teppei Ueno, Kaya Kobayashi, Jun Akimitsu, Yoshihiro Kubozono
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)
Abstract Doping a typical topological insulator, Bi2Se3, with Ag impurity causes a semiconductor–metal (S-M) transition at 35 K. To deepen the understanding of this phenomenon, structural and transport properties of Ag-doped Bi2Se3 were studied. Si
Externí odkaz:
https://doaj.org/article/cb1292a26c924206a4f124cb90599adb
Autor:
Ritsuko Eguchi, Megumi Senda, Eri Uesugi, Hidenori Goto, Akihiko Fujiwara, Yasuhiko Imai, Shigeru Kimura, Takashi Noji, Yoji Koike, Yoshihiro Kubozono
Publikováno v:
Materials Research Express, Vol 7, Iss 3, p 036001 (2020)
We investigated the temperature dependence of resistivity in thin crystals of FeSe _1−x Te _x (x = 1.0, 0.95, and 0.9), though bulk crystals with 1.0 ≧ × ≧ 0.9 are known to be non-superconducting. With decreasing thickness of the crystals, the
Externí odkaz:
https://doaj.org/article/a969258b3eed4e5f851da1b1a5ca2029
Autor:
Yasuhiko Imai, Megumi Senda, Ritsuko Eguchi, Yoshihiro Kubozono, Eri Uesugi, Hidenori Goto, Yoji Koike, Akihiko Fujiwara, Takashi Noji, Shigeru Kimura
Publikováno v:
Materials Research Express. 7(3):036001
We investigated the temperature dependence of resistivity in thin crystals of FeSe1−xTex (x = 1.0, 0.95, and 0.9), though bulk crystals with 1.0 ≧ × ≧ 0.9 are known to be non-superconducting. With decreasing thickness of the crystals, the resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7d079b70440c6fa51000f995bf6b562
https://ousar.lib.okayama-u.ac.jp/58215
https://ousar.lib.okayama-u.ac.jp/58215
Autor:
Eri, Uesugi, Takaki, Uchiyama, Hidenori, Goto, Hiromi, Ota, Teppei, Ueno, Hirokazu, Fujiwara, Kensei, Terashima, Takayoshi, Yokoya, Fumihiko, Matsui, Jun, Akimitsu, Kaya, Kobayashi, Yoshihiro, Kubozono
Publikováno v:
Scientific Reports
The temperature dependence of the resistivity (ρ) of Ag-doped Bi2Se3 (AgxBi2−xSe3) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi2Se3 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::60ef71c9474937958f2a279fe9060019
https://pubmed.ncbi.nlm.nih.gov/30926890
https://pubmed.ncbi.nlm.nih.gov/30926890
Publikováno v:
Physical Review B. 95
Field-effect transistors (FETs) were fabricated using exfoliated single crystals of Mo(Se1-x Te-x)(2) with an x range of 0 to 1, and the transistor properties fully investigated at 295 K in four-terminal measurement mode. The chemical composition and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d87012e3df71a2aa0e023a5c1c57d72
https://doi.org/10.1103/physrevb.95.245310
https://doi.org/10.1103/physrevb.95.245310
Autor:
Yuichi Kasahara, Saki Nishiyama, Hidenori Goto, Eri Uesugi, Yoshihiro Kubozono, Masanari Izumi, Lu Zheng, Yusuke Sakai, Yoshihiro Iwasa, Xiao Miao
Publikováno v:
Scientific Reports
We previously discovered multiple superconducting phases in the ammoniated Na-doped FeSe material, (NH3)yNaxFeSe. To clarify the origin of the multiple superconducting phases, the variation of Tc was fully investigated as a function of x in (NH3)yNax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e7ed9804eee41d08f57d75f19d12240
https://doi.org/10.1038/srep12774
https://doi.org/10.1038/srep12774
Publikováno v:
Applied Physics Letters. 109:252601
Electrostatic carrier-doping is attracting serious attention as a meaningful technique for producing interesting electronic states in two-dimensional (2D) layered materials. Ionic-liquid gating can provide the critical carrier density required to ind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f4c3ba1e037e6f9b5384e968a47c69f
https://doi.org/10.1063/1.4972400
https://doi.org/10.1063/1.4972400
Publikováno v:
Nano letters. 13(3)
Graphene has two kinds of edges which have different electronic properties. A singular electronic state emerges at zigzag edges, while it disappears at armchair edges. We study the edge-dependent transport properties in few-layer graphene by applying
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a02bd8f7b346e9983e9d9ed96390d3f
https://pubmed.ncbi.nlm.nih.gov/23409962
https://pubmed.ncbi.nlm.nih.gov/23409962
Autor:
Yuji Hamamoto, Yoshihiro Kubozono, Kenji Sugita, Ikutaro Hamada, Tomohiro Matsushita, Ritsuko Eguchi, Masanari Izumi, Yoshitada Morikawa, Hiroshi Daimon, Eri Uesugi, Hidenori Goto, Saki Nishiyama, Fumihiko Matsui
Publikováno v:
Scientific Reports
From the C 1s and K 2p photoelectron holograms, we directly reconstructed atomic images of the cleaved surface of a bimetal-intercalated graphite superconductor, (Ca, K)C8, which differed substantially from the expected bulk crystal structure based o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6466d21a19899182af444e2f15956629
http://hdl.handle.net/10061/11096
http://hdl.handle.net/10061/11096
Autor:
Saki Nishiyama, Kazuyoshi Yamada, Yoji Koike, Hidenori Goto, Yoshihiro Kubozono, Eri Uesugi, Hidehiko Akiyoshi
Publikováno v:
Advanced Electronic Materials. 1:1500085
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f1ff501818c85c207850bddde03f302
https://doi.org/10.1002/aelm.201500085
https://doi.org/10.1002/aelm.201500085