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Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

Autor: Shane R. Stein, Dolar Khachariya, Seiji Mita, M. Hayden Breckenridge, James Tweedie, Pramod Reddy, Kacper Sierakowski, Grzegorz Kamler, Michał Boćkowski, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis

Publikováno v: Applied Physics Express. 16:031006

We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low recti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::064f7c305b7164663b272aafaee60396
https://doi.org/10.35848/1882-0786/acc443

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Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Autor: Dolar Khachariya, Seiji Mita, Pramod Reddy, Saroj Dangi, J. Houston Dycus, Pegah Bagheri, M. Hayden Breckenridge, Rohan Sengupta, Shashwat Rathkanthiwar, Ronny Kirste, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis

Publikováno v: Applied Physics Letters. 120

The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrica

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d4a9ce9b63e5d32698aec000329f0c14
https://doi.org/10.1063/5.0083966

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Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation

Autor: Dolar Khachariya, Dennis Szymanski, Pramod Reddy, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis

Publikováno v: Applied Physics Letters. 120

In this Letter, we unveil the high-temperature limits of N-polar GaN Schottky contacts enhanced by a low-pressure chemical vapor deposited (LPCVD) SiN interlayer. Compared to conventional Schottky diodes, the insertion of a 5 nm SiN lossy dielectric

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe89675f7568734a2d76feb936329f89
https://doi.org/10.1063/5.0083588

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(Invited) A Path Toward Vertical GaN Superjunction Devices

Autor: Pramod Reddy, Zlatko Sitar, Erhard Kohn, Ramon Collazo, Dolar Khachariya, Spyridon Pavlidis, Dennis Szymanski

Publikováno v: ECS Transactions. 98:69-79

GaN devices offer exciting competition to incumbent technologies to meet the growing demand for high power electronic devices. The wide bandgap of GaN makes it possible to achieve higher breakdown voltages and reduced on-resistances compared to tradi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4d7c59b73bb2d181278576236c958961
https://doi.org/10.1149/09806.0069ecst

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Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Autor: Dolar Khachariya, Shane Stein, Will Mecouch, M. Hayden Breckenridge, Shashwat Rathkanthiwar, Seiji Mita, Baxter Moody, Pramod Reddy, James Tweedie, Ronny Kirste, Kacper Sierakowski, Grzegorz Kamler, Michal Bockowski, Erhard Kohn, Spyridon Pavlidis, Ramón Collazo, Zlatko Sitar

Publikováno v: Applied Physics Express. 15:101004

We report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c31e55f36315ed8f51b8310ff4ed154d
https://doi.org/10.35848/1882-0786/ac8f81

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Al0.85Ga0.15N/Al0.6Ga0.4N High Electron Mobility Transistors on Native AlN Substrates with >9 MV/cm Mesa Breakdown Fields

Autor: Seiji Mita, Ramon Collazo, Rohan Sengupta, Dolar Khachariya, Spyridon Pavlidis, M. Hayden Breckenridge, Pegah Bagheri, Zlatko Sitar, Saroj Dangi, Pramod Reddy, Erhard Kohn

Publikováno v: DRC

Introduction: The large critical electric field (E C ) of ultra-wide band bandgap (UWBG) semiconductors makes them attractive candidates for next-generation high power and high frequency electronics. High Al-content AlGaN high electron mobility trans

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::90b708d5cd10cfcaecae4eca2453ebcd
https://doi.org/10.1109/drc52342.2021.9467186

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Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

Autor: Shashwat Rathkanthiwar, Dennis Szymanski, Dolar Khachariya, Pegah Bagheri, Ji Hyun Kim, Seiji Mita, Pramod Reddy, Erhard Kohn, Spyridon Pavlidis, Ronny Kirste, Ramón Collazo, Zlatko Sitar

Publikováno v: Applied Physics Express. 15:081004

We report on low resistivity (1.1 Ω cm) in p-type bulk doping of N-polar GaN grown by metalorganic chemical vapor deposition. High nitrogen chemical potential growth, facilitated by high process supersaturation, was instrumental in reducing the inco

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f6f201521bad9d771c17117a81329bd6
https://doi.org/10.35848/1882-0786/ac8273

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(Invited, Digital Presentation) Exploring Interfaces and Polarity to Realize Vertical III-Nitride Superjunction Devices

Autor: Spyridon Pavlidis, Dolar Khachariya, Dennis Szymanski, Pramod Reddy, Erhard Kohn, Zlatko Sitar, Ramon Collazo

Publikováno v: ECS Meeting Abstracts. :1313-1313

In recent years, there has been a surge of research and commercial interest in gallium nitride (GaN)-based devices for power conversion applications. This is largely motivated by the wide bandgap of GaN, which offers a unipolar limit of performance t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f93eb8e6f522ec69aabf9a7440572363
https://doi.org/10.1149/ma2022-01311313mtgabs

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