Zobrazeno 1 - 10
of 124
pro vyhledávání: '"Ergin, Oğuz"'
Autor:
Canpolat, Oğuzhan, Yağlıkçı, A. Giray, Oliveira, Geraldo F., Olgun, Ataberk, Ergin, Oğuz, Mutlu, Onur
We present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per Row Activation Counting (PRAC), described in JEDEC DDR5 specification's April 2024 update. Unli
Externí odkaz:
http://arxiv.org/abs/2406.19094
Autor:
Canpolat, Oğuzhan, Yağlıkçı, A. Giray, Olgun, Ataberk, Yüksel, İsmail Emir, Tuğrul, Yahya Can, Kanellopoulos, Konstantinos, Ergin, Oğuz, Mutlu, Onur
RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. RowHammer solutions perform preventive actions (e.g., refresh neighbo
Externí odkaz:
http://arxiv.org/abs/2404.13477
Autor:
Yüksel, İsmail Emir, Olgun, Ataberk, Salami, Behzad, Bostancı, F. Nisa, Tuğrul, Yahya Can, Yağlıkçı, A. Giray, Ghiasi, Nika Mansouri, Mutlu, Onur, Ergin, Oğuz
Prior works propose SRAM-based TRNGs that extract entropy from SRAM arrays. SRAM arrays are widely used in a majority of specialized or general-purpose chips that perform the computation to store data inside the chip. Thus, SRAM-based TRNGs present a
Externí odkaz:
http://arxiv.org/abs/2211.10894
Autor:
Olgun, Ataberk, Hassan, Hasan, Yağlıkçı, A. Giray, Tuğrul, Yahya Can, Orosa, Lois, Luo, Haocong, Patel, Minesh, Ergin, Oğuz, Mutlu, Onur
To understand and improve DRAM performance, reliability, security and energy efficiency, prior works study characteristics of commodity DRAM chips. Unfortunately, state-of-the-art open source infrastructures capable of conducting such studies are obs
Externí odkaz:
http://arxiv.org/abs/2211.05838
Autor:
Yağlıkçı, Abdullah Giray, Olgun, Ataberk, Patel, Minesh, Luo, Haocong, Hassan, Hasan, Orosa, Lois, Ergin, Oğuz, Mutlu, Onur
DRAM is the building block of modern main memory systems. DRAM cells must be periodically refreshed to prevent data loss. Refresh operations degrade system performance by interfering with memory accesses. As DRAM chip density increases with technolog
Externí odkaz:
http://arxiv.org/abs/2209.10198
Autor:
Olgun, Ataberk, Bostanci, F. Nisa, Oliveira, Geraldo F., Tugrul, Yahya Can, Bera, Rahul, Yaglikci, A. Giray, Hassan, Hasan, Ergin, Oguz, Mutlu, Onur
We propose Sectored DRAM, a new, low-overhead DRAM substrate that reduces wasted energy by enabling fine-grained DRAM data transfers and DRAM row activation. Sectored DRAM leverages two key ideas to enable fine-grained data transfers and row activati
Externí odkaz:
http://arxiv.org/abs/2207.13795
Modern cloud computing systems distribute software executables over a network to keep the software sources, which are typically compiled in a security-critical cluster, secret. We develop ERIC, a new, efficient, and general software obfuscation frame
Externí odkaz:
http://arxiv.org/abs/2207.07407
Autor:
Olgun, Ataberk, Luna, Juan Gomez, Kanellopoulos, Konstantinos, Salami, Behzad, Hassan, Hasan, Ergin, Oguz, Mutlu, Onur
DRAM-based main memory is used in nearly all computing systems as a major component. One way of overcoming the main memory bottleneck is to move computation near memory, a paradigm known as processing-in-memory (PiM). Recent PiM techniques provide a
Externí odkaz:
http://arxiv.org/abs/2206.00263
Autor:
Bostancı, F. Nisa, Olgun, Ataberk, Orosa, Lois, Yağlıkçı, A. Giray, Kim, Jeremie S., Hassan, Hasan, Ergin, Oğuz, Mutlu, Onur
Random number generation is an important task in a wide variety of critical applications including cryptographic algorithms, scientific simulations, and industrial testing tools. True Random Number Generators (TRNGs) produce truly random data by samp
Externí odkaz:
http://arxiv.org/abs/2201.01385
Autor:
Olgun, Ataberk, Luna, Juan Gómez, Kanellopoulos, Konstantinos, Salami, Behzad, Hassan, Hasan, Ergin, Oğuz, Mutlu, Onur
Processing-using-memory (PuM) techniques leverage the analog operation of memory cells to perform computation. Several recent works have demonstrated PuM techniques in off-the-shelf DRAM devices. Since DRAM is the dominant memory technology as main m
Externí odkaz:
http://arxiv.org/abs/2111.00082