Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths

Autor: Giulio Tavani, Chiara Barri, Erfan Mafakheri, Giorgia Franzò, Michele Celebrano, Michele Castriotta, Matteo Di Giancamillo, Giorgio Ferrari, Francesco Picciariello, Giulio Foletto, Costantino Agnesi, Giuseppe Vallone, Paolo Villoresi, Vito Sorianello, Davide Rotta, Marco Finazzi, Monica Bollani, Enrico Prati

Publikováno v: Materials, Vol 16, Iss 6, p 2344 (2023)

Recent advancements in quantum key distribution (QKD) protocols opened the chance to exploit nonlaser sources for their implementation. A possible solution might consist in erbium-doped light emitting diodes (LEDs), which are able to produce photons

Externí odkaz: https://doaj.org/article/3af94e4a6806424684c633ac974622fa

Measuring the orbital angular momentum spectrum of an electron beam

Autor: Vincenzo Grillo, Amir H. Tavabi, Federico Venturi, Hugo Larocque, Roberto Balboni, Gian Carlo Gazzadi, Stefano Frabboni, Peng-Han Lu, Erfan Mafakheri, Frédéric Bouchard, Rafal E. Dunin-Borkowski, Robert W. Boyd, Martin P. J. Lavery, Miles J. Padgett, Ebrahim Karimi

Publikováno v: Nature Communications, Vol 8, Iss 1, Pp 1-6 (2017)

Existing methods of characterizing electron beams carrying orbital angular momentum are inefficient as they allow measuring one OAM state at a time. Here the authors demonstrate an OAM spectrometer capable of analysing multiple OAM states and a poten

Externí odkaz: https://doaj.org/article/9931279062df4b67bbd3590c95f1d2a8

Fabrication and optical characterization of erbium-doped silicon diode for quantum communication applications

Autor: Giulio Tavani, Giorgia Franzò, Michele Castriotta, Giorgio Ferrari, Francesco Picciariello, Giulio Foletto, Costantino Agnesi, Paolo Villoresi, Giuseppe Vallone, Davide Rotta, Chiara Barri, Erfan Mafakheri, Michele Celebrano, Marco Finazzi, Monica Bollani, Enrico Prati

Quantum Key Distribution allows two users to exchange secret keys and it is based on the transmission of single photons or attenuated laser pulses. Recently, sources based on multiple single-photon emitters were demonstrated to be suitable for QKD. H

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49e33cc76f3700e99c3efb49f41a1285
https://hdl.handle.net/11577/3481431

Tailoring Third-Harmonic Diffraction Efficiency by Hybrid Modes in High-Q Metasurfaces

Autor: Kirill I. Okhlopkov, Attilio Zilli, Andrea Tognazzi, Davide Rocco, Luca Fagiani, Erfan Mafakheri, Monica Bollani, Marco Finazzi, Michele Celebrano, Maxim R. Shcherbakov, Costantino De Angelis, Andrey A. Fedyanin

Metasurfaces are versatile tools for manipulating light; however, they have received little attention as devices for the efficient control of nonlinearly diffracted light. Here, we demonstrate nonlinear wavefront control through third-harmonic genera

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4811fcb800e1426c70f4fbdad86def1
http://hdl.handle.net/11379/561616

Engineering of the spin on dopant process on silicon on insulator substrate

Autor: Erfan Mafakheri, Giulio Tavani, Alexey Fedorov, Michele Perego, Mario Lodari, Andrea Barzaghi, Daniel Chrastina, Chiara Barri, Elisa Arduca, Francesco Scotognella, Luca Fagiani, Marco Abbarchi, Jacopo Frigerio, Monica Bollani

Publikováno v: Nanotechnology, 32(2)
Nanotechnology
Nanotechnology (Bristol, Online) (2021). doi:10.1088/1361-6528/abbdda
info:cnr-pdr/source/autori:Chiara Barri, Erfan Mafakheri, Luca Fagiani, Giulio Tavani, Andrea Barzaghi, Daniel Chrastina, Alexey Fedorov, Jacopo Frigerio, Mario Lodari, Francesco Scotognella, Elisa Arduca, Marco Abbarchi, Michele Perego, Monica Bollani/titolo:Engineering of the spin on dopant process on silicon on insulator substrate/doi:10.1088%2F1361-6528%2Fabbdda/rivista:Nanotechnology (Bristol, Online)/anno:2021/pagina_da:/pagina_a:/intervallo_pagine:/volume
Nanotechnology, 2020, 32 (2), pp.025303

We report on a systematic analysis of phosphorus diffusion in silicon on insulator thin film via spin-on-dopant process (SOD). This method is used to provide an impurity source for semiconductor junction fabrication. The dopant is first spread into t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2820540ce06e6e358be47d8274aa73e8
http://resolver.tudelft.nl/uuid:1959a311-9279-4652-884b-fcbd120731a0