Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Erfan Bashar"'
Publikováno v:
Fluids, Vol 9, Iss 6, p 142 (2024)
Large animals are increasingly used as experimental models of respiratory diseases. Precise characterization of respiratory mechanics requires dedicated equipment with specific characteristics which are difficult to find together in the same commerci
Externí odkaz:
https://doaj.org/article/076743c6f5214265986b13c4fe880b52
Publikováno v:
Energies, Vol 16, Iss 11, p 4380 (2023)
This review explores the performance and reliability of power semiconductor devices required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification can be implemented using (i) batteries charged with ultra-rapid DC charging
Externí odkaz:
https://doaj.org/article/9d157e60ff8e4d39a84c4b5e40b16438
Publikováno v:
The Journal of Engineering (2019)
This study presents a study on the time when the short-circuit fault current in an MV distribution network will cross the zero point in the presence of DC offset affected by the local synchronous and/or induction machines. The motivation of the study
Externí odkaz:
https://doaj.org/article/3555ee9fcc694971b11b2c60ef32ad3a
Autor:
Chengjun Shen, Saeed Jahdi, Mellor, Phil H., Juefei Yang, Erfan Bashar, Jose Ortiz-Gonzalez, Olayiwola Alatise
Publikováno v:
Shen, C, Jahdi, S, Mellor, P H, Yang, J, Bashar, E, Ortiz-Gonzalez, J & Alatise, O 2022, Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes . in 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) . Institute of Electrical and Electronics Engineers (IEEE), Hanover, Germany, 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, 5/09/22 . < https://ieeexplore.ieee.org/document/9907751 >
University of Bristol-PURE
University of Bristol-PURE
A comprehensive range of static measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results shows that the forward voltage of Silicon PiN diode is low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::71195b39e8b915ae8057bc1f59711be7
https://ieeexplore.ieee.org/document/9907751
https://ieeexplore.ieee.org/document/9907751
Autor:
Arkadeep Deb, Jose Ortiz Gonzalez, Erfan Bashar, Mohamed Taha, Mahdi Tousizadeh, Saeed Jahdi, Philip Mawby, Lionel Masson, Olayiwola Alatise
Publikováno v:
Deb, A, Gonzalez, J O, Bashar, E, Jahdi, S, Taha, M & Taodizadeh, M 2022, Unipolar and Bipolar Pulsed Gate Stresses and Threshold Voltage Shifts in GaN e-HEMTs . in 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 . 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, Institute of Electrical and Electronics Engineers (IEEE), Detroit, MI, USA, 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 9/10/22 . https://doi.org/10.1109/ECCE50734.2022.9947415
In GaN e-HEMTs, Threshold Voltage (VTH) shift from gate voltage (VGS) stress depends on the VGs magnitude, stress time, recovery time (time between stress removal and VTH measurement), temperature and pulse polarity (0 to +VGS or −VGS to +VGS ). In
Autor:
Arkadeep Deb, Jose Ortiz Gonzalez, Erfan Bashar, Saeed Jahdi, Mohamed Taha, Philip Mawby, Olayiwola Alatise
Publikováno v:
Deb, A, Gonzalez, J O, Bashar, E, Jahdi, S, Taha, M, Mawby, P & Alatise, O 2022, On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices . in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) . Institute of Electrical and Electronics Engineers (IEEE), Coventry, United Kingdom, 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 18/09/22 . https://doi.org/10.1109/WiPDAEurope55971.2022.9936437
This paper investigates the peculiarities and challenges of accurate threshold voltage ( VTH ) measurement after gate bias stress in SiC MOSFETs and GaN e-HEMTs. Traditional techniques historically used in silicon MOSFETs involve test sequences typic
Autor:
Sunday Nereus Agbo, Erfan Bashar, Ruizhu Wu, Simon Mendy, Jose Ortiz Gonzalez, Olayiwola Alatise
Using experimental measurements and finite element simulations, this paper investigates the failure mode of SiC Cascode JFETs under short circuit (SC) conditions. Unlike SiC MOSFETs, where failure results in a shorted gate-source terminal (resulting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a97b8a54470106a7ba85adf03a88d1d2
http://wrap.warwick.ac.uk/161786/1/WRAP-Simulations-measurements-failure-modes-SiC-cascodes-JFETs-conditions-2021.pdf
http://wrap.warwick.ac.uk/161786/1/WRAP-Simulations-measurements-failure-modes-SiC-cascodes-JFETs-conditions-2021.pdf
Autor:
G. W. C. Baker, Vishal Shah, Oliver J. Vavasour, Peter M. Gammon, Fan Li, John D. Murphy, Tianxiang Dai, Marina Antoniou, Nicholas E. Grant, A. B. Renz, Erfan Bashar, Philip Mawby
This letter reports on the improvement of a SiO2 layer formed by atomic layer deposition on 4H-SiC, using a post-deposition anneal in forming gas ambient. Capacitance–voltage measurements revealed good electrical properties, compared to a thermal o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f4db377096a66f7422b21adebbed823
http://wrap.warwick.ac.uk/146763/1/WRAP-improvement-atomic-layer-deposited-SiO2-4H-SiC-interfaces-high-temperature-forming-gas-anneal-Murphy-2021.pdf
http://wrap.warwick.ac.uk/146763/1/WRAP-improvement-atomic-layer-deposited-SiO2-4H-SiC-interfaces-high-temperature-forming-gas-anneal-Murphy-2021.pdf
Autor:
Erfan Bashar, Daniel J. Rogers, Timothy C. Green, Philip Mawby, Ruizhu Wu, Michael R. Jennings, Li Ran
To control power flow and manage fault level in meshed MV networks, back-to-back voltage source converters (B2B-VSCs) are being used. However, their high cost and relatively low efficiency are of concerns. Partially rated series compensators, such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f34cc00a5c311635eaaf219cfbe6dd9
https://cronfa.swan.ac.uk/Record/cronfa53888
https://cronfa.swan.ac.uk/Record/cronfa53888
Autor:
Erfan Bashar, Ruizhu Wu, Ortiz Gonzalez, Olayiwola Alatise, Simon Mendy, Saeed Jahdi, S.N. Agbo
Publikováno v:
Wu, R, Agbo, S N, Mendy, S, Bashar, E, Jahdi, S, Gonzalez, O & Alatise, O 2021, ' Measurement and simulation of short circuit current sharing under parallel connection : SiC MOSFETs and SiC Cascode JFETs ', Microelectronics Reliability, vol. 126, 114271 . https://doi.org/10.1016/j.microrel.2021.114271
Short-Circuit (SC) current sharing in parallel connected SiC MOSFETs and SiC Cascode JFETs have been investigated using experimental measurements and finite element models. Device parametric variation between parallel devices contributes to uneven cu