Study of the influence of gamma irradiation on internal friction in dislocation silicon.

Autor: Ashrapov U; Department of Nuclear Energy and Nuclear Technologies of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan. Electronic address: ashrapov@inp.uz., Makhkamov S; Laboratory of Radiation Physics and Solid State Electronics Techniques of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan., Sadikov I; Department of Nuclear Energy and Nuclear Technologies of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan., Tashmetov M; Laboratory of Radiation Physics and Solid State Electronics Techniques of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan., Erdonov M; Laboratory of Radiation Physics and Solid State Electronics Techniques of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan.

Publikováno v: Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine [Appl Radiat Isot] 2023 Mar; Vol. 193, pp. 110623. Date of Electronic Publication: 2022 Dec 21.

Formation of low-dimensional impurity defective compositions in doped silicon under the thermal and radiation treatments

Autor: Makhkamov, Sh., Tursunov, N. A., Karimov, M., Sattiev, A. R., Kurbanov, A. O., Mahmudov, Sh. A., Erdonov, M. N.

Turkish International Cooperation Agency.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_____10309::24823ecd0f79300eff21cb3352e6f3f3
http://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/1490

Formation of radiation defects in zinc-doped silicon solar cells.

Autor: Makhkamov, Sh., Muminov, R., Karimov, M., Abdurakhmanov, K., Tursunov, N., Sattiev, A., Erdonov, M., Kholmedov, Kh.

Publikováno v: Applied Solar Energy (19349424); Oct2013, Vol. 49 Issue 4, p185-191, 7p

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