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Autor:
Erdogan Guljari, Rajeev Malik
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:2219-2225
Single crystal silicon thin films have been grown on Si(100) substrates using pulsed supersonic jets of a disilane (Si2H6)-hydrogen mixture. Digital epitaxy has been achieved at substrate temperatures of 400–500 °C, with a growth rate of 0.1 A/pul