Zobrazeno 1 - 10
of 172
pro vyhledávání: '"Erdmann Frederick Schubert"'
Autor:
Seung Cheol Han, Jun Young Kim, Jae-sik Yoon, Jae-Kwan Kim, Ji-Myon Lee, Jong Kyu Kim, Erdmann Frederick Schubert, Dong-Min Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 13:5715-5718
The electrical properties of Ni-based ohmic contacts to N-face p-type GaN were investigated. The specific contact resistance of N-face p-GaN exhibits a linear decrease from 1.01 omega cm2 to 9.05 x 10(-3) omega cm2 for the as-deposited and the anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3868ad6017e954711f797cd120fd3877
https://doi.org/10.1166/jnn.2013.7072
https://doi.org/10.1166/jnn.2013.7072
Publikováno v:
Electronic Materials Letters. 10:1155-1157
Investigating the relationship between the breakdown voltage and the capacitance of GaInN light-emitting diodes (LEDs), we find that a lower capacitance due to weaker internal electric field in depletion region or wider depletion width at the pn junc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7428f56071344e26d6c52535263ffff0
https://doi.org/10.1007/s13391-014-4008-7
https://doi.org/10.1007/s13391-014-4008-7
Autor:
Arya Chatterjee, Peter C. Wayner, Manas Ojha, Joel L. Plawsky, Frank W. Mont, Erdmann Frederick Schubert
Publikováno v:
International Journal of Heat and Mass Transfer. 53:910-922
We compared the phase change behavior of a partially wetting fluid, nonane, on various SiO2 surfaces that had been modified to alter their roughness at the nanoscale. We compared a total of four surfaces: an as-received, smooth surface; a surface rou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae1224112e833ee736bb28e6043a3250
https://doi.org/10.1016/j.ijheatmasstransfer.2009.11.033
https://doi.org/10.1016/j.ijheatmasstransfer.2009.11.033
Autor:
Di Zhu, Min-Ho Kim, Yongjo Park, Erdmann Frederick Schubert, Jong Kyu Kim, Wonseok Lee, Martin F. Schubert
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 15:1122-1127
GaInN-based multiple-quantum-well (MQW) blue LEDs with ternary GaInN barriers polarization-matched to GaInN wells are fabricated. Single-layered Ga0.9In0.1N and Ga0.9In0.1N/GaN multiple-layered quantum barriers (MLQBs) are used for 50% polarization m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ef552860d414f2d615dc0a21fa81922
https://doi.org/10.1109/jstqe.2009.2014395
https://doi.org/10.1109/jstqe.2009.2014395
Publikováno v:
physica status solidi (b). 244:3002-3008
The refractive index, a most fundamental quantity in optics and optoelectronics, determines many figures of merit of optical components such as reflectors, filters, and resonators. Here we present a new class of optical thin-film materials that have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b05d7b46d696fd2bf9b1071154d3d0d7
https://doi.org/10.1002/pssb.200675603
https://doi.org/10.1002/pssb.200675603
Autor:
Theeradetch Detchprohm, Christian Wetzel, W. Zhao, Y. Xia, J. Senawiratne, Mingwei Zhu, Y. Li, Erdmann Frederick Schubert
Publikováno v:
physica status solidi c. 4:2784-2787
Department of Electrical, Computer, and Systems Engineering, Rensselaer, Troy, NY 12180, USA Received 19 September 2006, accepted 29 November 2006 Published online 31 May 2007 PACS 73.40.Kp, 73.61.Ey, 78.60.Hk, 78.67.De, 85.60.Jb The electroluminesce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c1daafe65e3c8b305c98921bc0317e
https://doi.org/10.1002/pssc.200674750
https://doi.org/10.1002/pssc.200674750
Autor:
Y. Xi, W. Liu, Jong Kyu Kim, K. X. Chen, Christian Wetzel, Frank W. Mont, Erdmann Frederick Schubert, J. A. Smart, X. Li
Publikováno v:
Journal of Electronic Materials. 36:533-537
A systematic study is performed to optimize aluminum nitride (AlN) epilayers grown on (0001) sapphire by metal-organic vapor-phase epitaxy. Specifically, the impact of the AlN nucleation conditions on the crystalline quality and surface morphology of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75cede13e0f348a74d5131c3eb07ac39
https://doi.org/10.1007/s11664-007-0099-3
https://doi.org/10.1007/s11664-007-0099-3
Autor:
Erdmann Frederick Schubert, D. Johnstone, Ishwara B. Bhat, T.P. Chow, Jong Kyu Kim, Kodigala Subba Ramaiah
Publikováno v:
Physica B: Condensed Matter. 391:35-41
We have systematically studied C- and Si-face n -4H-SiC wafers before and after the growth of epitaxial layers using an optical Nomarski microscope (ONM) and an atomic force microscope (AFM). In particular, a number of defects such as micropipes, mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7adcc2c71251fe5b270a30b16041892
https://doi.org/10.1016/j.physb.2006.08.051
https://doi.org/10.1016/j.physb.2006.08.051
Autor:
Mingwei Zhu, J. Senawiratne, Y. Li, Christian Wetzel, Erdmann Frederick Schubert, Y. Xi, W. Zhao, Theeradetch Detchprohm, Y. Xia
Publikováno v:
International Journal of High Speed Electronics and Systems. 17:29-33
We analyze GaInN based light emitting diodes emitting in the range of 400-550nm using a new intensity-quantitative spectroscopic cathodoluminescence mapping method. Spectroscopic information of arbitrary sample locations is generated from sequences o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0b1b53c87434269813430e735f91d74
https://doi.org/10.1142/s0129156407004199
https://doi.org/10.1142/s0129156407004199
Autor:
Christian Wetzel, Erdmann Frederick Schubert, D. Tsvetkov, Drew Hanser, Y. Xi, Mingwei Zhu, Lianghong Liu, Y. Li, Theeradetch Detchprohm, W. Zhao, Y. Xia
Publikováno v:
Journal of Crystal Growth. 298:272-275
We demonstrate homoepitaxial growth of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished surface. The threading dislocation densities of the epitaxial layers were 2-5 x 10 8 cm -2 which was one order of ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72608b093e3fbdc72ae781c6b877e996
https://doi.org/10.1016/j.jcrysgro.2006.10.129
https://doi.org/10.1016/j.jcrysgro.2006.10.129