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Autor:
Eran Mazal-Tov, Roberto Senesi, Christopher D. Frost, Eitan Keren, Carla Andreani, Enrico Preziosi, Nir M. Yitzhak, Tzach Hadas, Uzi Zangi, Carlo Cazzaniga, A. Haran, D. David, Nati Refaeli
Publikováno v:
IEEE Transactions on Nuclear Science. 68:2598-2608
The static random access memory (SRAM) of an ultralow power system-on-chip (SoC) was tested for single-event upsets (SEUs) using alpha particles and neutron beam sources. The measurements are compared to those of an SRAM-based field-programmable gate