Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Epoletov, V. S."'
Autor:
Marichev, A. E.1 (AUTHOR) Segregate1@yandex.ru, Epoletov, V. S.1 (AUTHOR), Pushnyi, B. V.1 (AUTHOR), Vlasov, A. S.1 (AUTHOR), Lihachev, A. E.1 (AUTHOR)
Publikováno v:
Semiconductors. Jan2024, Vol. 58 Issue 1, p53-56. 4p.
Autor:
Marichev, A. E.1 (AUTHOR) aemarichev@mail.ioffe.ru, Epoletov, V. S.1 (AUTHOR), Vlasov, A. S.1 (AUTHOR), Pushnyi, B. V.1 (AUTHOR), Lihachev, A. I.1 (AUTHOR), Nashchekin, A. V.1 (AUTHOR)
Publikováno v:
Technical Physics Letters. 2023 Supplement1, Vol. 49, pS68-S70. 3p.
Autor:
Epoletov, V. S.1 (AUTHOR) vadep@yandex.ru, Marichev, A. E.1 (AUTHOR), Pushnyi, B. V.1 (AUTHOR), Salii, R. A.1 (AUTHOR)
Publikováno v:
Technical Physics Letters. Dec2020, Vol. 46 Issue 12, p1167-1169. 3p.
Autor:
null Nashchekin A. V., null Lihachev A. I., null Pushnyi B. V., null Vlasov A. S., null Epoletov V. S., null Marichev A. E.
Publikováno v:
Technical Physics Letters. 48:82
The results of investigations by the method of Electron beam-induced current of p-n-junctions based on InP with GaP crystallites in the space charge region are presented. It is shown that the introduction of crystallites into the space charge region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::857dc602b54758390f1ef71fce537877
https://doi.org/10.21883/tpl.2022.14.55126.18893
https://doi.org/10.21883/tpl.2022.14.55126.18893