Zobrazeno 1 - 10
of 586
pro vyhledávání: '"Epitaxie"'
Publikováno v:
IEEE Journal of Photovoltaics. 11:1256-1263
This article describes the successful integration of a passivated, highly reflecting Ge rear side into a III-V multijunction solar cell. The use of lowly doped Ge and the new rear side leads to the aimed increase in Ge cell current up to 1.6 mA.cm (e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b25150ee9746d27ac46dde62f1b5ccd9
https://doi.org/10.1109/jphotov.2021.3087727
https://doi.org/10.1109/jphotov.2021.3087727
Autor:
Hentschel, Rico, Schmult, Stefan, Wachowiak, Andre, Großer, Andreas, Gärtner, Jan, Mikolajick, Thomas
In this report, the operation of a normally-off vertical gallium nitride (GaN) metal-oxide field effect transistor with a threshold voltage of 5 V is demonstrated. A crucial step during device fabrication is the formation of the highly n-doped source
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A81088
https://tud.qucosa.de/api/qucosa%3A81088/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A81088/attachment/ATT-0/
Autor:
Hoffmann, Michael, Khan, Asif Islam, Serrao, Claudy, Lu, Zhongyuan, Salahuddin, Sayeef, Pešić, Milan, Slesazeck, Stefan, Schroeder, Uwe, Mikolajick, Thomas
Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr₀.₂Ti₀.₈)O₃ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A80423
https://tud.qucosa.de/api/qucosa%3A80423/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A80423/attachment/ATT-0/
Autor:
Shchepetilnikov, A. V., Frolov, D. D., Solovyev, V. V., Nefyodov, Yu. A., Großer, A., Mikolajick, T., Schmult, S., Kukushkin, I. V.
Spin resonance of a two-dimensional electron system confined in a GaN/AlGaN heterostructure grown by molecular beam epitaxy was resistively detected over a wide range of magnetic field and microwave frequency. Although the spin-orbit interaction is s
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A79725
https://tud.qucosa.de/api/qucosa%3A79725/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A79725/attachment/ATT-0/
Autor:
Vermeersch, Remy
Publikováno v:
Other [cond-mat.other]. Université Grenoble Alpes [2020-..], 2023. English. ⟨NNT : 2023GRALY007⟩
The recent SARS-COV2 pandemic has highlighted one of the many applications of UV radiation: sterilization. Aiming at replacing bulky and environmentally hazardous mercury lamps emitting at 255 nm, research is directed towards the development of solid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3515::f1aa38ec713d926d0463a90e3172c1a5
https://theses.hal.science/tel-04122705/file/VERMEERSCH_2023_archivage.pdf
https://theses.hal.science/tel-04122705/file/VERMEERSCH_2023_archivage.pdf
Autor:
Frauenrath, Marvin
Publikováno v:
Physique [physics]. Université Grenoble Alpes [2020-..], 2022. Français. ⟨NNT : 2022GRALY092⟩
To extend Si integrated photonics from the Near to the Mid-Infrared, new light sources are required. Direct band gap GeSn with a Sn concentration above 8% is a promising candidate to fulfill such a task. Two doping strategies were investigated in ord
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3515::b76b630fc26fe6026c4087534abdc219
https://theses.hal.science/tel-04086845/file/FRAUENRATH_2022_archivage.pdf
https://theses.hal.science/tel-04086845/file/FRAUENRATH_2022_archivage.pdf
Autor:
Lot, Ruggero
Publikováno v:
Micro and nanotechnologies/Microelectronics. UT3 : Université Toulouse 3 Paul Sabatier, 2022. English. ⟨NNT : ⟩
National audience; Moore's Law is ended, but all is not lost. To maintain a higher transistor density, changing device geometry from planar to three-dimensional was one of the first successful approaches to take advantage of dimension z. In particula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4074::a37e760477370666d55a78767c53996c
https://hal.laas.fr/tel-04123446
https://hal.laas.fr/tel-04123446
Autor:
Paillet, Colin
Publikováno v:
Science des matériaux [cond-mat.mtrl-sci]. Université Grenoble Alpes [2020-..], 2022. Français. ⟨NNT : 2022GRALY014⟩
The herein manuscript describes the study of the growth of InGaN on graphene/SiC. This work aims to obtain a fully relaxed InGaN film with the highest possible indium concentration. The strain state of this alloy is of a great importance for long emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3515::36a548959fe9de342252f43b984e173b
https://theses.hal.science/tel-03823966
https://theses.hal.science/tel-03823966
Publikováno v:
IEEE Journal of Photovoltaics. 11:1264-1270
This article focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction solar cells were gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c873ed789bdb4f6fa18bd06567dbe3e
https://doi.org/10.1109/jphotov.2021.3090159
https://doi.org/10.1109/jphotov.2021.3090159