Zobrazeno 1 - 10
of 19 695
pro vyhledávání: '"Epitaxial Growth"'
Publikováno v:
Advanced Electronic Materials; Sep2024, Vol. 10 Issue 9, p1-8, 8p
Publikováno v:
Acta Physica Polonica: A. Jan2021, Vol. 139 Issue 1, p14-19. 6p.
Autor:
Gengshuo Liu, Shujie Liu, Tinghong Hou, jinyan Hu, Guanqun Du, Shuai Lv, Yu Wang, Weiwei Liu, Tao Li
Publikováno v:
Journal of Materials Research and Technology, Vol 31, Iss , Pp 888-897 (2024)
In this paper, the remelting process is applied to Laser Directed Energy Deposition (L-DED) to repair single crystal superalloys. The main formation modes of stray grains in single crystal epitaxial growth were analyzed, and the inhibitory effect of
Externí odkaz:
https://doaj.org/article/8202999670fe411c8d91cf40b2ab5185
Autor:
Siyi Tang, Lihao Yao, Md Shamim Sarker, Zhiqiang Liao, Kaijie Ma, Hiroyasu Yamahara, Hitoshi Tabata, Munetoshi Seki
Publikováno v:
Advanced Physics Research, Vol 3, Iss 11, Pp n/a-n/a (2024)
Abstract In spin wave (SW) devices, the modulation of SWs for computational units is necessary, imposing extremely high demands on material systems. In this study, high‐quality epitaxial‐grown spinel γ‐Fe2O3 thin films on conductive Nb‐doped
Externí odkaz:
https://doaj.org/article/37f4d691f3ff480d9888ddfff9274bf5
Publikováno v:
Science and Technology of Advanced Materials, Vol 25, Iss 1 (2024)
This study investigates the compositional analysis and growth of β-(InxGa1-x)2O3 thin films on (010) β-Ga2O3 substrates using mist chemical vapor deposition (CVD), including the effects of the growth temperature. We investigated the correlation bet
Externí odkaz:
https://doaj.org/article/67f5bca98c9040c2bfc4c8cc20998023
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Mazzolini, Piero1,2 (AUTHOR) piero.mazzolini@unipr.it, Fogarassy, Zsolt3 (AUTHOR), Parisini, Antonella1 (AUTHOR), Mezzadri, Francesco2,4 (AUTHOR), Diercks, David5 (AUTHOR), Bosi, Matteo2 (AUTHOR), Seravalli, Luca2 (AUTHOR), Sacchi, Anna1 (AUTHOR), Spaggiari, Giulia1,2 (AUTHOR), Bersani, Danilo1 (AUTHOR), Bierwagen, Oliver6 (AUTHOR), Janzen, Benjamin Moritz7 (AUTHOR), Marggraf, Marcella Naomi7 (AUTHOR), Wagner, Markus R.6,7 (AUTHOR), Cora, Ildiko3 (AUTHOR), Pécz, Béla3 (AUTHOR), Tahraoui, Abbes6 (AUTHOR), Bosio, Alessio1 (AUTHOR), Borelli, Carmine1 (AUTHOR), Leone, Stefano8 (AUTHOR)
Publikováno v:
Advanced Functional Materials. 1/10/2023, Vol. 33 Issue 2, p1-14. 14p.
Autor:
Guanhua Su, Shuling Xiang, Jiachang Bi, Fugang Qi, Peiyi Li, Shunda Zhang, Shaozhu Xiao, Ruyi Zhang, Zhiyang Wei, Yanwei Cao
Publikováno v:
Heliyon, Vol 10, Iss 13, Pp e33343- (2024)
Epitaxy of rare-earth nitride films are crucial for studying their physical properties and offer significant potential for applications in spintronics and optoelectronics. However, synthesizing single-crystalline LuN presents significant challenges,
Externí odkaz:
https://doaj.org/article/ac0f4b45b6c94ee2a84e744b5366e335