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pro vyhledávání: '"Ephrem Gebreselaie"'
Autor:
Edmund Banghart, Shesh Mani Pandey, Jian-Hsing Lee, Richard A. Poro, Nicholas Hogle, Natarajan Mahadeva Iyer, Manjunatha Prabhu, Ronghua Yu, Ephrem Gebreselaie, You Li, Robert Gauthier
Publikováno v:
2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
A very simple and useful scheme to enhance the ESD performance of the nFinFET is proposed. By incorporating the N-Well (NW) with the nFinFET, it becomes a low holding-voltage SCR if the NW contact is ohmic and becomes a high holding-voltage SCR if th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b7c346eb5f8c3019aa00b6ff8cb5a0a
https://doi.org/10.23919/eosesd.2017.8073416
https://doi.org/10.23919/eosesd.2017.8073416
