Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ephrem G. Gebreselasie"'
Autor:
Ping-Chuan Wang, J. D. Gillis, R. Previti-Kelly, J. Dunn, Hanyi Ding, Peter J. Lindgren, Mete Erturk, Mark Doherty, Ramana M. Malladi, Mike McPartlin, Alvin J. Joseph, Ephrem G. Gebreselasie
Publikováno v:
IBM Journal of Research and Development. 52:635-648
We feature a 0.35-µm SiGe BiCMOS technology (SiGe 5PAe) that is optimized for power amplifier (PA) applications. The key feature of this technology is a novel low-inductance ground to the package using through-silicon vias (TSVs) that results in a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::713fb84e40cb59a235193a0b6abd0838
https://doi.org/10.1147/jrd.2008.5388563
https://doi.org/10.1147/jrd.2008.5388563
Autor:
Koushik Ramachandran, Robert J. Gauthier, Thuy Tran-Quinn, You Li, Christy S. Tyberg, Matthew Angyal, Joel Abraham Silberman, Ephrem G. Gebreselasie, Katsuyuki Sakuma, Souvick Mitra
Publikováno v:
Scopus-Elsevier
A Design of Experiments (DOEs) matrix was created to evaluate probability of fails during a complex 3D integration process as a function of ESD protection level. A detailed set of pass/fail criteria based on circuit performance was established. Based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26c2916a0cb044455f603ec1f51f6ced
https://doi.org/10.1109/eosesd.2015.7314791
https://doi.org/10.1109/eosesd.2015.7314791
Autor:
J. Dunn, Qizhi Liu, Ramana M. Malladi, Peter B. Gray, Ping-Chuan Wang, Kenneth J. Stein, Douglas B. Hershberger, R. Previti-Kelly, Panglijen Candra, Ephrem G. Gebreselasie, Benjamin T. Voegeli, K. Watson, Wade J. Hodge, Peter J. Lindgren, Zhong-Xiang He, Alvin J. Joseph
Publikováno v:
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69f768941b9f07f9c4bc96f3507b0e97
https://doi.org/10.1109/bipol.2007.4351868
https://doi.org/10.1109/bipol.2007.4351868
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
Vertical parallel plate (VPP) capacitor elements are being used in RF components for RF CMOS and RF BiCMOS technologies. ESD robustness evaluation of the VPP capacitor is very important for RF applications when these elements are used on the input pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3737823e2888b9777f3f90d7b36e40d3
https://doi.org/10.1109/relphy.2007.369963
https://doi.org/10.1109/relphy.2007.369963
Autor:
Louis D. Lanzerotti, Marwan H. Khater, Natalie B. Feilchenfeld, Robert M. Rassel, S. St Onge, J. Dunn, Douglas D. Coolbaugh, David L. Harame, Bradley A. Orner, Jeffrey B. Johnson, Ephrem G. Gebreselasie, Alvin J. Joseph
Publikováno v:
CICC
High performance communications applications have made technology choices more important than ever. Silicon Germanium (SiGe) BiCMOS has enabled the widespread introduction of many these applications by providing superior cost and integration capabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3dc29c9c4731bc6e795b028df62cd53
https://doi.org/10.1109/cicc.2006.320882
https://doi.org/10.1109/cicc.2006.320882
Autor:
T. Larsen, Ephrem G. Gebreselasie, Louis D. Lanzerotti, S. St Onge, Steven H. Voldman, J. Dunn, Natalie B. Feilchenfeld, Alvin J. Joseph
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
This paper demonstrates the effect of a new low-cost oxide filled trench isolation structure, and implanted sub-collectors, on the latchup robustness. With scaling and focus on low-cost wireless technology, new technologies are being developed utiliz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62a72433f981dbe23df5059956206ed7
https://doi.org/10.1109/relphy.2005.1493072
https://doi.org/10.1109/relphy.2005.1493072
Publikováno v:
2004 Electrical Overstress/Electrostatic Discharge Symposium.
As the faster transistors are produced in BiCMOS SiGe technology, low voltage trigger ESD networks will be required to achieve good ESD protection. Diode-configured SiGe HBT trigger elements are used in a SiGe C HBT power clamp network in a 200/285 G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a5666e57ff07f42f416a0e24f734d5
https://doi.org/10.1109/eosesd.2004.5272633
https://doi.org/10.1109/eosesd.2004.5272633