Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Eok Su Kim"'
Autor:
Dae Hwan Kim, Kyoung Seok Son, Jun Tae Jang, Dong Myong Kim, Sung-Jin Choi, Seong-Ho Cho, Hara Kang, Eok Su Kim, Hye Ri Yu
Publikováno v:
IEEE Electron Device Letters. 40:40-43
The influence of anion composition on the electrical characteristics of amorphous zinc-oxynitride thin-film transitors (TFTs) is investigated and quantitatively modeled, with emphasis on the subgap density of states (DOS). As the ratio of N to (N + O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d523cf55c41055b9fce42b976b908eee
https://doi.org/10.1109/led.2018.2883732
https://doi.org/10.1109/led.2018.2883732
Autor:
Seungwu Han, Tae Sang Kim, Seok Jun Seo, Seong Ho Cho, Jong Baek Seon, Eok Su Kim, Myoung Kwan Ryu, Sun Jae Kim, Joon Seok Park, Sunhee Lee, Youngsoo Park, Kyoung Seok Son, Hyun-Suk Kim
Publikováno v:
Solid State Phenomena. :446-450
The fabrication of thin-film transistor devices incorporating active semiconductors based on zinc oxynitride (ZnON) compound is presented. It is demonstrated that the addition of appropriate dopant, gallium, in ZnON, suppresses the formation of shall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb2f65c63fd9058f1cec1c1c75946779
https://doi.org/10.4028/www.scientific.net/ssp.205-206.446
https://doi.org/10.4028/www.scientific.net/ssp.205-206.446
Autor:
Tae Sang Kim, Hyun-Suk Kim, Sang-Yun Lee, Joon Seok Park, Myung-kwan Ryu, Kwang Hee Lee, Kyoung Seok Son, Yong Nam Ham, Kyung Bae Park, Eok Su Kim, Wan-Joo Maeng
Publikováno v:
Journal of The Electrochemical Society. 159:H147-H150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a44f666827f7c0851d8ebb32435c119e
https://doi.org/10.1149/2.050202jes
https://doi.org/10.1149/2.050202jes
Publikováno v:
Applied Physics Letters. 113:022104
Electrical characteristics of self-aligned coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) were investigated for different annealing temperatures. The field-effect mobility of the a-IGZO TFTs increased with the anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8d31d1a263ba6db8934decfd000bf6c
https://doi.org/10.1063/1.5027373
https://doi.org/10.1063/1.5027373
Autor:
Kyoung Seok Son, Sang-Yun Lee, Kwang Hee Lee, Jang Yeon Kwon, Kyung-Bae Park, Tae Sang Kim, Myung Kwan Ryu, Eok Su Kim, Jong-Baek Seon, Wan-Joo Maeng, Hyun-Suk Kim, Ji Sim Jung, Joon Seok Park
Publikováno v:
IEEE Electron Device Letters. 31:960-962
Hafnium indium zinc oxide thin-film transistors (TFTs) with a double-gate structure were evaluated for the first time. Compared with devices with a single bottom gate, TFTs with an additional top gate exhibit improved subthreshold swing, threshold vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddd5ff4cd7894cbfda658f4d27e07a2b
https://doi.org/10.1109/led.2010.2051407
https://doi.org/10.1109/led.2010.2051407
Autor:
Alan Seabaugh, Kaustav Banerjee, Jiahao Kang, Debdeep Jena, Eok Su Kim, Pei Zhao, Wan Sik Hwang, Gong Gu, Randy Feenstra, Grace Xing
Publikováno v:
2013 IEEE International Electron Devices Meeting.
Two-dimensional crystal semiconductors such as graphene, BN, and the transition-metal dichalcogenides (TMDs) are perceived as attractive candidates for ultrascaled electronic devices. In this work, we discuss a few novel device concepts based on them
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ea4980a1c0b86d4af81eda751eaefc9
https://doi.org/10.1109/iedm.2013.6724657
https://doi.org/10.1109/iedm.2013.6724657
Autor:
Dong-Jae Shin, Seong-Ho Cho, Sunhee Lee, Chunhyung Jo, Tae Sang Kim, Kyung Min Lee, Hyun-Suk Kim, Sungwoo Jun, Youngsoo Park, Joon Seok Park, Dae Hwan Kim, Sun Jae Kim, Kyoung Seok Son, Seok-Jun Seo, Dong Myong Kim, Eok Su Kim, Jaewook Lee, Jong-Baek Seon, Myung-kwan Ryu, Sung-Jin Choi
Publikováno v:
2013 IEEE International Electron Devices Meeting.
High speed thin film transistors (TFTs) are in great need for next-generation TVs which will employ ultra high definition resolution (3840×2160) panels and possibly include multi-view autostereoscopic 3D technology which will negate the use of glass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9217e1df7bc7ec8b7688a2c39a47e352
https://doi.org/10.1109/iedm.2013.6724701
https://doi.org/10.1109/iedm.2013.6724701
Publikováno v:
IEEE Transactions on Magnetics. 42:3213-3215
The perpendicular magnetic recording process of a shielded-pole-type head was studied using the finite-element micromagnetic simulation. When the return and write pole are sufficiently close to each other, 40 nm in our simulation, the effective recor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81f72c873007846eaea409bd8ee862e2
https://doi.org/10.1109/tmag.2006.880107
https://doi.org/10.1109/tmag.2006.880107
Autor:
Hoon Song, Yunhee Kim, Yongjoo Kwon, Sang Yoon Lee, Seungyeol Choi, Jungmok Bae, Kyu-hwan Choi, Yoon-sun Choi, Junghoon Lee, Eok-su Kim
Publikováno v:
SPIE Proceedings.
An arrayed beam steering device enables much simplified system architectures for high quality multiview 3D displays by adapting time multiplexing and eye tracking scheme. An array device consisting of microscale liquid prisms is presented, where the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae385743ca36559a461d16a63ed59b0e
https://doi.org/10.1117/12.2005516
https://doi.org/10.1117/12.2005516
Autor:
Woong Choi, Thomas H. Kosel, Debdeep Jena, Sunhee Lee, Sunkook Kim, Wan Sik Hwang, Yun Sung Lee, Sang Yoon Lee, Hartwin Peelaers, Eok Su Kim, Chris G. Van de Walle
Publikováno v:
2012 International Electron Devices Meeting.
We show that multilayered transition-metal dichalcogenides such as multilayer MoS 2 present a compelling case for Thin-Film Transistors (TFTs) for large-area display technology. Through a combined structural, optical, and electronic characterization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::833c740a4326cf6bfed63c9589b0364b
https://doi.org/10.1109/iedm.2012.6478985
https://doi.org/10.1109/iedm.2012.6478985