Zobrazeno 1 - 10
of 357
pro vyhledávání: '"Eoin P. O'Reilly"'
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXXI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4249e0108b3c5bbfa8e0f88146acd991
https://doi.org/10.1117/12.2646345
https://doi.org/10.1117/12.2646345
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXXI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a05f6cea6fe42e5526ec02bb3789744f
https://doi.org/10.1117/12.2648228
https://doi.org/10.1117/12.2648228
Autor:
Eoin P. O'Reilly
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3aba64eb792be8a0690e991bac7ffab
https://doi.org/10.23919/islc52947.2022.9943433
https://doi.org/10.23919/islc52947.2022.9943433
Publikováno v:
Optics Express. 31:11536
We use a Fourier-transform based method to investigate the magnitude and robustness of mode selectivity in as-cleaved discrete-mode semiconductor lasers, where a small number of refractive index perturbations are introduced into a Fabry-Pérot laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48bf8294f5e974f41b886bea9572401d
https://doi.org/10.1364/oe.485879
https://doi.org/10.1364/oe.485879
Publikováno v:
Physical Review Applied. 17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::192b1ceeb1aeb70c92c6b04edd043c60
https://doi.org/10.1103/physrevapplied.17.014029
https://doi.org/10.1103/physrevapplied.17.014029
Autor:
Eoin P. O'Reilly, Niall Boohan
We investigate the impact of different real space slot distribution functions on threshold gain selectivity in index-patterned lasers, showing how careful choice of function should ensure high yield of devices which emit at or near a target wavelengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6dc94e96a5b43f3ad95841c33d084641
https://hdl.handle.net/10468/12550
https://hdl.handle.net/10468/12550
Publikováno v:
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
Solving the multi-band k•p Schrodinger equation for a quantum-confined heterostructure using a reciprocal space plane wave approach presents several advantages compared to conventional real space approaches such as the finite difference or element
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9113b1a73474d4ca43a704a6a45e719
https://doi.org/10.1109/nusod52207.2021.9541479
https://doi.org/10.1109/nusod52207.2021.9541479
Autor:
Alexei Chelnokov, Donguk Nam, Dan Buca, Wei Du, Christopher A. Broderick, Jeremy Witzens, Oussama Moutanabbir, Shui-Qing Yu, Xiao Gong, Simone Assali, Bahareh Marzban, Eoin P. O'Reilly
Publikováno v:
Applied physics letters 118(11), 110502-(2021). doi:10.1063/5.0043511
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device-quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e26b0a6f45d3c1b4334fa53dda463dbb
Autor:
Giorgio Gravina, Maksym Myronov, Eoin P. O'Reilly, E Vitiello, Andrea Balocchi, Xavier Marie, Christopher A. Broderick, Simone Rossi, Fabio Pezzoli
Publikováno v:
Physical Review Applied. 14
We present a magneto-optical study of the carrier dynamics in compressively strained ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}$ films with $\mathrm{Sn}$ content up to 10% epitaxially grown on $\mathrm{Ge}$ on $\mathrm{Si}$(001) virtual subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbab813c96131175b9ef66497648254b
https://doi.org/10.1103/physrevapplied.14.064068
https://doi.org/10.1103/physrevapplied.14.064068
Publikováno v:
Optical and Quantum Electronics. 52
We present a theoretical analysis of the electronic properties of type-II $$\hbox {GaAs}_{1-x} \hbox {Sb}_{x}$$ /GaAs quantum rings (QRs), from the perspective of applications in intermediate band solar cells (IBSCs). We outline the analytical soluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1111d0d1b5f44a5f398b3f57ea8c7363
https://doi.org/10.1007/s11082-020-02567-3
https://doi.org/10.1007/s11082-020-02567-3