Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Enzo Fontana"'
Autor:
Vladislav Volosov, Santina Bevilacqua, Laura Anoldo, Giuseppe Tosto, Enzo Fontana, Alfio-lip Russo, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico
Publikováno v:
Micromachines, Vol 15, Iss 7, p 872 (2024)
This paper investigates the threshold voltage shift (ΔVTH) induced by positive bias temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔVTH under various gate stress voltages (VGstress) at 150 °C, distinct mechanis
Externí odkaz:
https://doaj.org/article/672f0d33bc154624acc403cea5af402f
Publikováno v:
European Journal of Case Reports in Internal Medicine, Vol 1, Iss 1 (2014)
Objectives: To recall the common clinical presenting features of and guide the diagnostic procedures of primary thyroid lymphomas (PTL). Materials and methods: We report on three patients developing an acute dyspnoea and fast evolving neck mass in t
Externí odkaz:
https://doaj.org/article/dbe8f859715642f2a17f6c1e5bf480e6
Publikováno v:
Praxis. 110:760-763
Zusammenfassung. Unspezifische Symptome, wie z.B. (Ober-)Bauchschmerzen, sind bei Personen mit chronischen Erkrankungen, insbesondere Adipositas, Typ-2-Diabetes, Hypertonie oder ischämischer Herzerkrankung, manchmal schwierig zu beurteilen. Hier bes
Autor:
Francesco La Via, Simona Lorenti, Nicolò Piluso, Maria Ausilia di Stefano, Enzo Fontana, Marco Salanitri, Ruggero Anzalone, Andrea Severino, Alberto Campione, Patrick Fiorenza
Publikováno v:
Materials Science Forum. 924:84-87
In this work the deposition of buffer layer has been studied in order to increase the quality of the epitaxial layer and improve the performance of device. The comparison between two different thicknesses of buffer layer reveals a decrease of crystal
Autor:
Stefania Privitera, Grazia Litrico, M. A. Di Stefano, Simona Lorenti, Alfio Russo, F. La Via, Salvo Coffa, Nicolò Piluso, Enzo Fontana
Publikováno v:
MRS Advances. 1:3673-3678
In this paper the defects generated by ion implantation in 4H-SiC DIMOSFET (Double Implanted MOSFETs), and their evolution after annealing process, have been studied in detail. The point defects generated by the source or body implantation process ha
Autor:
Salvatore Coffa, Francesco La Via, Alfio Russo, Simona Lorenti, Nicolò Piluso, Enzo Fontana, Cinzia M. Marcellino
Publikováno v:
Materials Science Forum. 858:418-421
In this paper the influence of point defects generated by the ion implantation process in 4H-SiC DIMOSFET has been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence
Publikováno v:
Gynecological Endocrinology. 30:561-564
To evaluate the incidence of gestational diabetes mellitus (GDM), gestational glucose intolerance (GGI), and birth major complications, a population of 1042 pregnant women was screened after the end of the second trimester with a two-step screening m
Autor:
Laurent Morel, Claude Regamey, Murielle Ottiger, Enzo Fontana, Jean-Marie Michel, André Ruffieux
Publikováno v:
La Presse Médicale. 37:49-53
Resume Introduction Apres une chirurgie bariatrique, 5 a 10 % des patients ont des complications neurologiques peripheriques ou centrales. Observation Un homme de 39 ans, connu pour un syndrome metabolique, avait eu un by-pass gastrique. L’interven
Publikováno v:
European Journal of Case Reports in Internal Medicine, Vol 1, Iss 1 (2014)
Objectives: To recall the common clinical presenting features of and guide the diagnostic procedures of primary thyroid lymphomas (PTL). Materials and methods: We report on three patients developing an acute dyspnoea and fast evolving neck mass in th
Publikováno v:
Journal of Periodontology. 65:658-665
Soft membranes were used in 69 patients for bone regeneration around implants (blades and screws, submerged and non-submerged) placed into extraction sockets. In about 10% of the patients a prosthetic restoration was completed immediately, while in t