Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Enyi Xiong"'
Autor:
Yinglu Li, Shuhua Wei, Enyi Xiong, Jiawei Hu, Xufang Zhang, Yanrong Wang, Jing Zhang, Jiang Yan, Zhaohao Zhang, Huaxiang Yin, Qingzhu Zhang
Publikováno v:
Biosensors, Vol 14, Iss 3, p 144 (2024)
Silicon nanowire field effect (SiNW-FET) biosensors have been successfully used in the detection of nucleic acids, proteins and other molecules owing to their advantages of ultra-high sensitivity, high specificity, and label-free and immediate respon
Externí odkaz:
https://doaj.org/article/ee9a07d3398d46d28733197abd1ccf4a
Autor:
Siqi Tang, Jiang Yan, Jing Zhang, Shuhua Wei, Qingzhu Zhang, Junjie Li, Min Fang, Shuang Zhang, Enyi Xiong, Yanrong Wang, Jianglan Yang, Zhaohao Zhang, Qianhui Wei, Huaxiang Yin, Wenwu Wang, Hailing Tu
Publikováno v:
Nanomaterials, Vol 10, Iss 12, p 2488 (2020)
In this paper, the poly-Si nanowire (NW) field-effect transistor (FET) sensor arrays were fabricated by adopting low-temperature annealing (600 °C/30 s) and feasible spacer image transfer (SIT) processes for future monolithic three-dimensional integ
Externí odkaz:
https://doaj.org/article/93cf14739c4a4376928392f25506db81
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Autor:
Zhaohao Zhang, Jiang Yan, Qingzhu Zhang, Huaxiang Yin, Enyi Xiong, Jing Zhang, Shuang Zhang, Siqi Tang, Junjie Li, Qianhui Wei, Yanrong Wang, Jianglan Yang, Shuhua Wei, Hailing Tu, Wenwu Wang, Min Fang
Publikováno v:
Nanomaterials
Volume 10
Issue 12
Nanomaterials, Vol 10, Iss 2488, p 2488 (2020)
Volume 10
Issue 12
Nanomaterials, Vol 10, Iss 2488, p 2488 (2020)
In this paper, the poly-Si nanowire (NW) field-effect transistor (FET) sensor arrays were fabricated by adopting low-temperature annealing (600 °
C/30 s) and feasible spacer image transfer (SIT) processes for future monolithic three-dimension
C/30 s) and feasible spacer image transfer (SIT) processes for future monolithic three-dimension