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Autor:
Kyoung-Jae Soh, Kwang-Il Park, Byungsub Kim, Won-Cheol Lee, Young-Soo Sohn, Jae-Yoon Sim, Ensung Seo, Min-Kyun Chae, Hong-June Park
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 9:336-342
A parallel branching synchronous dynamic random access memory (SDRAM) channel with write-direction impedance matching (parallel branching with write-direction impedance matching (PBIM)) is proposed for an 8-drop 6.4-Gb/s SDRAM interface. The 8-drop P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef4bc545b61a9b2efe61994afb825c4d
https://doi.org/10.1109/tcpmt.2018.2869593
https://doi.org/10.1109/tcpmt.2018.2869593
