Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Enrique Maset"'
Autor:
Enrique Maset, Pedro Martín-Holgado, Yolanda Morilla, David Gilabert, Esteban Sanchis-Kilders, Pedro J. Martínez
Publikováno v:
Applied Sciences, Vol 12, Iss 22, p 11578 (2022)
Dynamic RON is a key parameter in terms of device reliability and the efficiency of power-switching converters. In this study, commercial off-the-shelf GaN-on-Si power high-electron-mobility transistors (HEMTs) were irradiated using different regimes
Externí odkaz:
https://doaj.org/article/0dea0a0552d04ac4a16f15a3959d7987
Autor:
Enrique Maset, Juan Bta. Ejea, Agustín Ferreres, José Luis Lizán, Jose Manuel Blanes, Esteban Sanchis-Kilders, Ausias Garrigós
Publikováno v:
Energies, Vol 13, Iss 24, p 6583 (2020)
This paper presents the possibility of using Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) instead of the conventional silicon metal oxide semiconductor field effect transistor (MOSFET) to implement a high-frequency intermediate bu
Externí odkaz:
https://doaj.org/article/098b23e39f9743feaf47de6825cce9cf
Autor:
Pedro J. Martínez, Enrique Maset, Pedro Martín-Holgado, Yolanda Morilla, David Gilabert, Esteban Sanchis-Kilders
Publikováno v:
Materials, Vol 12, Iss 17, p 2760 (2019)
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where
Externí odkaz:
https://doaj.org/article/c9960c65abb24a6b9a7268dd64427395
Autor:
Enrique Maset Sancho, Vicente Esteve, Jose Jordan, Esteban Sanchis Kilders, Pedro J. Martinez, Enrique J. Dede, David Gilabert Palmer
Publikováno v:
IEEE Transactions on Industrial Electronics. 69:11100-11111
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e424156e9ea71d123fefd6a0bcaa4db5
https://doi.org/10.1109/tie.2021.3121730
https://doi.org/10.1109/tie.2021.3121730
Autor:
Vicente Esteve, Agustin Ferreres, Enrique Maset, Pedro J. Martinez, D. Gilabert, Esteban Sanchis-Kilders
Publikováno v:
IEEE Transactions on Industrial Electronics. 68:304-311
Coupled inductors are widely used in multiple outputs and interleaved dc–dc converters. Also filters often use coupled inductors as their inductive part. A generalized design procedure is proposed in this article focused on current ripple minimizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94fba2e6b1b318743cab02210a15a396
https://doi.org/10.1109/tie.2019.2962399
https://doi.org/10.1109/tie.2019.2962399
Autor:
José Luis Lizán, Juan B. Ejea, Esteban Sanchis-Kilders, Agustin Ferreres, Ausias Garrigos, Enrique Maset, Jose M. Blanes
Publikováno v:
Energies
Volume 13
Issue 24
Energies, Vol 13, Iss 6583, p 6583 (2020)
Volume 13
Issue 24
Energies, Vol 13, Iss 6583, p 6583 (2020)
This paper presents the possibility of using Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) instead of the conventional silicon metal oxide semiconductor field effect transistor (MOSFET) to implement a high-frequency intermediate bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::370254d90d3a0f43f7a22a0d90f86d97
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf1792d560ef42391484624fb6af0428
https://publica.fraunhofer.de/handle/publica/262533
https://publica.fraunhofer.de/handle/publica/262533
Autor:
Agustin Ferreres, Vicente Esteve, Enrique Maset, Pedro J. Martinez, D. Gilabert, Esteban Sanchis-Kilders
Publikováno v:
Gilabert, David Sanchis Kilders, Esteban Martínez, Pedro J. Maset Sancho, Enrique Ferreres Sabater, Agustín Esteve Gómez, Vicente 2020 Zero Ripple Current with Coupled Inductors in Continuous Conduction Mode under PWM Signals Ieee Journal Of Emerging And Selected Topics In Power Electronics 8 4 4260 4269
RODERIC. Repositorio Institucional de la Universitat de Valéncia
instname
RODERIC: Repositorio Institucional de la Universitat de Valéncia
RODERIC. Repositorio Institucional de la Universitat de Valéncia
instname
RODERIC: Repositorio Institucional de la Universitat de Valéncia
This article presents a generalized analysis to explain current ripple of an $m$ windings coupled inductor with a given coupling factor $k_{ij}$ for each pair of windings and then studies more in detail its use in the continuous conduction mode and w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f691ef7768d99713a3c96983a9e1723
https://doi.org/10.1109/JESTPE.2019.2940848
https://doi.org/10.1109/JESTPE.2019.2940848
Autor:
Enrique Maset, Jose Jordn, Esteban Sanchis-Kilders, Juan B. Ejea, Agustan Ferreres, Enrique J. Dede, Vicente Esteve, David Gilabert-Palmer
Publikováno v:
IEEE Transactions on Power Electronics. 33:9790-9802
Multiple coupled inductors are used in power electronics to improve the dynamic cross regulation and to reduce mass and volume, mainly in high performance application, such as space or defense, where manufacturing cost is not the main driver. These e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29b34f66a7d6037c7b19855c9bcdbf80
https://doi.org/10.1109/tpel.2018.2794621
https://doi.org/10.1109/tpel.2018.2794621
Publikováno v:
2019 European Space Power Conference (ESPC).
This work discusses some ideas to adapt existing low voltage Latching Current Limiter (LCL) circuits to high voltage operation to provide a basis for future designs. Component selection, driver and ancillary power supply are key issues discussed whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::838453e4d1b8448c0f8175c9c9e7a5c8
https://doi.org/10.1109/espc.2019.8931995
https://doi.org/10.1109/espc.2019.8931995