MOCVD Growth of Ge-Sb-Te Nanowires by the VLS Process

Autor: Massimo Longo 1, Claudia Wiemer 1, Olivier Salicio O, Marco Fanciulli 1,2, Enrico Varesi 3, Paolo Targa 3

Publikováno v: MRS Spring Meeting: Symposium H: Phase-Change Materials for Memory and Reconfigurable Electronics Applications, pp. 124–124, San Francisco, California, USA, 2010
info:cnr-pdr/source/autori:Massimo Longo 1; Claudia Wiemer 1; Olivier Salicio O; Marco Fanciulli 1,2; Enrico Varesi 3; Paolo Targa 3/congresso_nome:MRS Spring Meeting: Symposium H: Phase-Change Materials for Memory and Reconfigurable Electronics Applications/congresso_luogo:San Francisco, California, USA/congresso_data:2010/anno:2010/pagina_da:124/pagina_a:124/intervallo_pagine:124–124

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::15fafb98fd8b26a01852986560dce4d2
https://publications.cnr.it/doc/86981