Zobrazeno 1 - 10
of 228
pro vyhledávání: '"Enrico Sangiorgi"'
Autor:
Vladislav Volosov, Santina Bevilacqua, Laura Anoldo, Giuseppe Tosto, Enzo Fontana, Alfio-lip Russo, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico
Publikováno v:
Micromachines, Vol 15, Iss 7, p 872 (2024)
This paper investigates the threshold voltage shift (ΔVTH) induced by positive bias temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔVTH under various gate stress voltages (VGstress) at 150 °C, distinct mechanis
Externí odkaz:
https://doaj.org/article/672f0d33bc154624acc403cea5af402f
Autor:
Enrico Sangiorgi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 1-2 (2023)
The Journal of Electron Devices Society (J-EDS) is the Gold Open Access publication of the Electron Device Society and since inception in 2013, it has gained and consolidated its scientific reputation.
Externí odkaz:
https://doaj.org/article/c60ed7bc4e43480c95dc6dabb9c049a3
Autor:
Man Wong, Enrico Sangiorgi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 759-759 (2023)
Dedicated to advancing the field of electron devices through open-access publication, the Journal of the Electron Devices Society (J-EDS) has made great strides since its inception in 2013. Thanks to the collective efforts of all stake holders, inclu
Externí odkaz:
https://doaj.org/article/5c0e2787979544e683bbdebcfe668188
Autor:
Enrico Sangiorgi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 1-2 (2022)
I Would like to express my sincere gratitude – and the gratitude of the Electron Device Society (EDS) community at large – to Colin McAndrew, A. G. Unil Perera, and Krishna Shenai, for their commitment, dedication, and hard work during their nine
Externí odkaz:
https://doaj.org/article/8d53e3599f464a16a959bba07107e8c6
Autor:
Enrico Sangiorgi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp xlvi-xlvi (2020)
The Journal of Electron Devices Society (J-EDS) was founded in 2013 and grown up very robustly since then.
Externí odkaz:
https://doaj.org/article/8732acb47cdf4664915b66ffe24bc8ea
Autor:
Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, Andrea Mario Torti, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 219-226 (2018)
In this paper, we present an analysis of the degradation induced by hot-carrier stress in new generation power lateral double-diffused MOS (LDMOS) transistors. Two architectures with the same nominal voltage and comparable performance featuring a sel
Externí odkaz:
https://doaj.org/article/1545a4b31b074714aba5c92606e5f508
Autor:
Enrico Sangiorgi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 429-430 (2021)
In recent years the Journal of the Electron Device Society (J-EDS) has experienced an increasing number of submissions of “simulation only” manuscripts. One reason for this is the improved accuracy and maturity of physicsbased simulation tools, e
Externí odkaz:
https://doaj.org/article/79ea68fdc1f64c0ebe5f97e9c52a6dd3
Autor:
Enrico Sangiorgi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1-1 (2021)
I would like to express my sincere gratitude—and the gratitude of the Electron Device Society (EDS) community at large—to David Abe and Tian-Ling Ren, for their commitment, dedication and hard work during their six years of service on the Journal
Externí odkaz:
https://doaj.org/article/68cbdc6f839847a093f645abcd907129
Autor:
Marco Crescentini, Michele Rossi, Peter Ashburn, Marta Lombardini, Enrico Sangiorgi, Hywel Morgan, Marco Tartagni
Publikováno v:
Biosensors, Vol 6, Iss 2, p 15 (2016)
Silicon nanowires are label-free sensors that allow real-time measurements. They are economical and pave the road for point-of-care applications but require complex readout and skilled personnel. We propose a new model and technique for sensing nanow
Externí odkaz:
https://doaj.org/article/aee65dcdd4da46fdbd119d92ddb7c7c9
Publikováno v:
Electronics
Volume 12
Issue 4
Pages: 943
Volume 12
Issue 4
Pages: 943
High-voltage GaN switches can offer tremendous advantages over silicon counterparts for the development of high-efficiency switching-mode power converters at high commutation frequency. Nonetheless, GaN devices are prone to charge-trapping effects th