Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Enrico Bellmann"'
Autor:
Hyosung Lee, Seonho Lee, Hyungju Rah, Iksun Park, Jaeil Lee, Jaewoong Sohn, Yongchan Kim, Christoph Ehrlich, Philip Groeger, Sven Boese, Enrico Bellmann, Stefan Buhl, Seop Kim, Kang-san Lee
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cd86afdf947eb61481e0e5a98b08a15
https://doi.org/10.1117/12.2657679
https://doi.org/10.1117/12.2657679
Autor:
Tobias Hoeer, Hyeon-Jun Ha, Seon-ho Lee, Seop Kim, Holger Bald, Jang-Sun Kim, Boris Habets, Enrico Bellmann
Publikováno v:
Optical Microlithography XXXIII.
In most leading-edge technologies, first layers usually are more critical than later layers. For some technologies, however, most critical layers are in mid-of line. On such technologies, less advanced equipment is used for first layers. Because such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17aa6d2814e8960937ab604ba7e4e007
https://doi.org/10.1117/12.2552735
https://doi.org/10.1117/12.2552735
Autor:
Enrico Bellmann, Steven Tottewitz, Stefan Buhl, Heongsoo Kim, Sangjun Han, Boris Habets, Martin Rößiger, Hongoo Lee, Seop Kim
Publikováno v:
SPIE Proceedings.
Non-linear overlay deformation is a well-known problem in critical lithography steps. A significant root cause is nonuniform stress, often caused by high temperature processes. Non-uniform stress in the wafer causes vertical deformation of the wafer,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e16eec749a7f7db451bb216b3617770
https://doi.org/10.1117/12.2259858
https://doi.org/10.1117/12.2259858
Publikováno v:
SPIE Proceedings.
Wafer leveling data are usually used inside the exposure tool for ensuring good focus, then discarded. This paper describes the implementation of a monitoring and analysis solution to download these data automatically, together with the correction pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95e643aa864adea89da235c5db70d571
https://doi.org/10.1117/12.2230389
https://doi.org/10.1117/12.2230389
Autor:
Martin Rößiger, Enrico Bellmann, Sangjun Han, Seop Kim, Honggoo Lee, Stefan Buhl, Steffen Guhlemann, Boris Habets, Myoungsoo Kim
Publikováno v:
SPIE Proceedings.
High order overlay and alignment models require good coverage of overlay or alignment marks on the wafer. But dense sampling plans are not possible for throughput reasons. Therefore, sampling plan optimization has become a key issue. We analyze the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81cb6b438dd16cb2400c9f9d42987c67
https://doi.org/10.1117/12.2219037
https://doi.org/10.1117/12.2219037
Autor:
Zakir Ullah, Rajanish Javvaji, Stefan Buhl, Boris Habets, Steven Tottewitz, Georg Erley, Alan Lim, Lieu Chia Chuen, Enrico Bellmann
Publikováno v:
SPIE Proceedings.
This paper focuses on orthogonal model corrections where model parameters do not influence each other as long as the measurement layout is sufficiently symmetric. For the grid correction we used Zernike polynomials, and for the intrafield correction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2420e104717d0aacb886ecc2b7c99efc
https://doi.org/10.1117/12.2085013
https://doi.org/10.1117/12.2085013