Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Enno Malguth"'
Autor:
Wolfgang M. Klesse, Lahbib Zealouk, Andreas Rathsfeld, Claudine Groß, Enno Malguth, Oliver Skibitzki
Publikováno v:
Measurement. 170:108721
To satisfy the continuous demand of ever smaller feature sizes, plasma etching technologies in microelectronics enable the fabrication of device structures in the nanometer range. To control these processes, real-time access to the structure’s dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ac4c9f29841ee641276db587c9d0e4b
https://doi.org/10.1016/j.measurement.2020.108721
https://doi.org/10.1016/j.measurement.2020.108721
Autor:
Caspar Leendertz, A. Laades, Florian Ruske, Bernd Rech, Thomas Barthel, Enno Malguth, Lars Korte, Maurizio Roczen, Jose Ordeñez, J A Töfflinger, Martin Schade, Hartmut S. Leipner
Publikováno v:
physica status solidi (a). 210:676-681
The structural properties of crystalline Si nanodots embedded in a SiO2 matrix are investigated with respect to the exploitation of quantum confinement effects (QCE) in Si solar cells. The nanostructures are grown on crystalline Si (c-Si) wafers by d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f1e9eaf4e49d75b07237898cee13fd9
https://doi.org/10.1002/pssa.201200803
https://doi.org/10.1002/pssa.201200803
Autor:
A. Laades, Orman Gref, Maurizio Roczen, M. Blech, J A Töfflinger, Thomas Barthel, Manfred Schmidt, Martin Schade, Andreas Schöpke, Hartmut S. Leipner, Enno Malguth, Bernd Rech, Lars Korte
Publikováno v:
Journal of Non-Crystalline Solids. 358:2253-2256
Two different growth mechanisms are compared for the fabrication of Si/SiO2 nanostructures on crystalline silicon (c-Si) to be used as hetero-emitter in high-efficiency solar cells: (1) The decomposition of substoichiometric amorphous SiOx (a-SiOx) f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68a50ec7214650d7e92a75f637cb55dc
https://doi.org/10.1016/j.jnoncrysol.2011.11.024
https://doi.org/10.1016/j.jnoncrysol.2011.11.024
Autor:
Axel Hoffmann, Andreas Schöpke, Maurizio Roczen, Martin Schade, Orman Gref, Florian Ruske, Hartmut S. Leipner, J A Töfflinger, Thomas Barthel, Enno Malguth, Gordon Callsen, Matthew R. Phillips, Lars Korte, Manfred Schmidt, Bernd Rech
Publikováno v:
Applied Physics A. 108:719-726
The self-organized growth of crystalline silicon nanodots and their structural characteristics are investigated. For the nanodot synthesis, thin amorphous silicon (a-Si) layers with different thicknesses have been deposited onto the ultrathin (2 nm)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f17b3a0da41084620251e04d1f892c8
https://doi.org/10.1007/s00339-012-6956-9
https://doi.org/10.1007/s00339-012-6956-9
Publikováno v:
physica status solidi (a). 208:612-615
The synthesis of Si/SiO 2 nanostructures for the application as hetero-emitter and passivation layer in high-efficiency solar cells is explored with the long-term perspective of exploiting quantum size effects for next-generation photovoltaics. Ultra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ff2fb567eab81cf3b62016e1bc96c86
https://doi.org/10.1002/pssa.201000253
https://doi.org/10.1002/pssa.201000253
Publikováno v:
physica status solidi (b). 245:455-480
Many theoretical and experimental studies deal with the realization of room-temperature ferromagnetism in dilute magnetic semiconductors (DMS). However, a detailed quantitative understanding of the electronic properties of transition metal doped semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6f2eab09537f12d59f375572489dd78
https://doi.org/10.1002/pssb.200743315
https://doi.org/10.1002/pssb.200743315
Autor:
Unil Perera, Ali Asghar, Matthew H. Kane, Axel Hoffmann, Ian T. Ferguson, Nikolaus Dietz, Wolfgang Gehlhoff, Z. G. Hu, Martin Strassburg, Samuel Graham, Jayantha Senawiratne, D. Azamat, Christopher J. Summers, William E. Fenwick, Enno Malguth
Publikováno v:
physica status solidi c. 3:2237-2240
Ga1–xMnxN epilayers and p-i-n device structures have been grown by metalorganic chemical vapor deposition. Optical studies were found to investigate the role of Mn concentration and the role of different co-dopants to elucidate the origin of the ro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e53564f9750b9d61cc75b74ce973213d
https://doi.org/10.1002/pssc.200565434
https://doi.org/10.1002/pssc.200565434
Autor:
Axel Hoffmann, Ewa M. Goldys, T. Graf, Martin Strassburg, Enno Malguth, O. Gelhausen, Martin Stutzmann, M. Gjukic, Matthew R. Phillips
Publikováno v:
Applied Physics Letters. 84:4514-4516
The optical properties of molecular-beam-epitaxy-grown GaN with different Mn-doping levels (5–23×1019 cm−3) were studied by cathodoluminescence (CL) and optical transmission spectroscopy. Transmission measurements at 2 K revealed an absorption p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c53eb3d8441575d0137daadb9f6e573
https://doi.org/10.1063/1.1757641
https://doi.org/10.1063/1.1757641
Autor:
Axel Hoffmann, Matthias Driess, Christian Rauch, Markus R. Wagner, Enno Malguth, Gordon Callsen, B. Salameh, Ronny Kirste, Wolfgang Gehlhoff, Yilmaz Aksu, Sebastian Polarz
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 107, 024311 (2010) and may be found at https://doi.org/10.1063/1.32758
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a9ced849e16ac1b9164665e33b2e70a
https://depositonce.tu-berlin.de/handle/11303/10902
https://depositonce.tu-berlin.de/handle/11303/10902
Publikováno v:
Zinc Oxide ISBN: 9783642105760
In ZnO, deep centres such as the transition metal ions Cu, Fe, Co, etc., deep acceptors such as Li and Na as well as intrinsic defects such as the cation and anion vacancies are the origin of light emissions in various regions of the visible and infr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4eafb91df4a99e47feffa65abc9ab07
https://doi.org/10.1007/978-3-642-10577-7_9
https://doi.org/10.1007/978-3-642-10577-7_9