Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Ennis T. Ogawa"'
Autor:
Mabrouk Chaara, Javed Sandhu, Melissa Lau, Darren M.-L. Ho, Endruw Jahja, Edward Law, Kashish Shah, Leah Hilborn, Bei Zhu, Paolo Samson, Gaius See, Manoj Nair, Ricky W. M. Chen, Michael Hsieh, Steven Nguyen, Jeff Mendoza, George Hung, Keith Tan, Susan R. Mulford, Feynman W.-C. Chiang, Aimin Xing, Vijay Reddy, Hugh Jorge-Estevez, Frank Hui, James S. J. Tong, Ten V. Y. Ten, David F.-S. Liao, Liming Tsau, J. K. Wang, Ennis T. Ogawa, Ying-Ying Hsieh, Galen Kirkpatrick, Richard Mah, Chong Wei Neo
Publikováno v:
International Symposium on Microelectronics. 2016:S1-S52
Fanout Wafer Level Packaging (FoWLP) is a very attractive solution for microelectronics applications requiring optimized performance, smaller form factor, and low cost. By utilizing such an approach where system integration is done to multiple chips
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9393419b14ad9cb50b1837fd6bf640e
https://doi.org/10.4071/isom-2016-slide-6
https://doi.org/10.4071/isom-2016-slide-6
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
SRAM physical unclonable function (PUF) provides a low-cost security key to address hardware attacks such as cloning as well as for reliability tracking of ICs in the field. In this work the quality and aging reliability of 28 nm high-K metal gate pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ba3b909e0440ce87f7556ef70668190
https://doi.org/10.1109/irps.2017.7936393
https://doi.org/10.1109/irps.2017.7936393
Autor:
Ennis T. Ogawa, Oliver Aubel
Publikováno v:
Advanced Interconnects for ULSI Technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c45da6ab1f1d2d200fad72995341cf7
https://doi.org/10.1002/9781119963677.ch11
https://doi.org/10.1002/9781119963677.ch11
Publikováno v:
Journal of Applied Physics. 86:6018-6027
The photothermal displacement technique has been used to measure the out-of-plane thermal diffusivity in free-standing polymer thin films. The technique can be applied to a single sample as well as a collection of samples of different film thickness.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9e9504aae86cdf5ecf10b06de512abe
https://doi.org/10.1063/1.371649
https://doi.org/10.1063/1.371649
Publikováno v:
Journal of Applied Physics. 86:6028-6038
A three-dimensional analytical solution as well as experimental verification of the thermoelastically induced deformation in a substrate-constrained thin polymeric film have been developed. In this model, the elastic deformations of the two layers ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f82d889224f6af82ba1b7c310c8386c2
https://doi.org/10.1063/1.371650
https://doi.org/10.1063/1.371650
Autor:
Ennis T. Ogawa
Publikováno v:
2013 IEEE International Integrated Reliability Workshop Final Report.
Back-end-of-Line (BeoL) Reliability has been a major concern at least since electromigration (EM) was first identified in the late 1960s as a critical failure mechanism within integrated circuits. Typically, reliability concerns arose because simple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee19f3d6414c2d06df4de5bd9140c7a
https://doi.org/10.1109/iirw.2013.6804140
https://doi.org/10.1109/iirw.2013.6804140
Publikováno v:
Applied Physics Letters. 82:2032-2034
Electromigration (EM) reliability was investigated for Cu/porous low k interconnects. The porous low k dielectric was a methylsilsesquioxane (MSQ) based spin-on organosilicate material with k of 2.2. The activation energy for EM failure was found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c332d973210d1a28d06150ad5694b332
https://doi.org/10.1063/1.1564294
https://doi.org/10.1063/1.1564294
Autor:
Hisao Kawasaki, C. Capasso, J. T. Wetzel, D. Jawarani, Martin Gall, Ennis T. Ogawa, Patrick R. Justison, Paul S. Ho
Publikováno v:
Applied Physics Letters. 79:4414-4416
The impact of low-k dielectrics on the reliability of advanced Cu interconnects is of growing importance. As a first step to understanding this impact, we have investigated the effect of two types of polymeric low-k materials on the electromigration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5ff1871d88089b840b1d967e50d50cd
https://doi.org/10.1063/1.1421426
https://doi.org/10.1063/1.1421426
Autor:
V. Blaschke, Ki Don Lee, Kil Soo Ko, Hideki Matsuhashi, Ennis T. Ogawa, Patrick R. Justison, Paul S. Ho
Publikováno v:
Applied Physics Letters. 79:3236-3238
Electromigration tests at temperatures between 340 and 400 °C and current densities between 1.0 and 3.0 MA/cm2 have been performed to determine the temperature dependence of the critical length effect in 0.5-μm-wide Cu/oxide dual-damascene intercon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c8fc0eae46f341b1daa47da004da74
https://doi.org/10.1063/1.1418034
https://doi.org/10.1063/1.1418034
Autor:
Alexander J. Bierwag, Paul S. Ho, A. N. Ramamurthi, V. Blaschke, Mark R. Breen, Ennis T. Ogawa, Ki Don Lee, Robert H. Havemann, Patrick R. Justison, Anne Nelsen, Hideki Matsuhashi, David Griffiths
Publikováno v:
Applied Physics Letters. 78:2652-2654
Electromigration results have provided clear evidence of a short or “Blech” length effect in dual- damascene, Cu/oxide, multilinked interconnects. The test structure incorporates a repeated chain of Blech-type line elements and is amenable to fai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59f301ed83feb32f960ffa70f8a56331
https://doi.org/10.1063/1.1365414
https://doi.org/10.1063/1.1365414