Zobrazeno 1 - 10
of 1 077
pro vyhledávání: '"Enhancement-mode"'
Autor:
Wei-Cheng Wang, Ming-Dou Ker
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 760-769 (2024)
When more circuit functions are integrated into a single chip fabricated by the GaN-on-Silicon process, the need for on-chip electrostatic discharge (ESD) protection design becomes crucial to safeguard GaN integrated circuits (ICs). In this work, the
Externí odkaz:
https://doaj.org/article/c812b251c91d44b28f446af7b8bb188f
Publikováno v:
IEEE Access, Vol 12, Pp 42791-42801 (2024)
In this article, enhancement-mode (E-mode) operation is achieved by employing a trench gate on the $\beta $ -Ga2O3 current aperture vertical MOSFETs via Sentaurus TCAD simulation. The performance of the trench gate $\beta $ -Ga2O3 MOSFETs was investi
Externí odkaz:
https://doaj.org/article/1e5f22bccde446f380a7b58e00fb85fe
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 104-112 (2024)
In this study, we report a novel approach for achieving high-performance enhancement mode (E-mode) InAlN/GaN MOS HEMTs based on the fluorine treatment and a p-type NiOx gate (F-NiO HEMT). The NiO film was deposited at different substrate temperatures
Externí odkaz:
https://doaj.org/article/c650e0c8d51f4dcba80d920baf62d1b2
Publikováno v:
Sensors, Vol 24, Iss 17, p 5822 (2024)
We demonstrate a Sn-doped monoclinic gallium oxide (β-Ga2O3)-based deep ultraviolet (DUV) phototransistor with high area coverage and manufacturing efficiency. The threshold voltage (VT) switches between negative and positive depending on the β-Ga2
Externí odkaz:
https://doaj.org/article/5ad99f6d7aa64ac695b513b99824c5ff
Publikováno v:
Results in Physics, Vol 60, Iss , Pp 107701- (2024)
In this study, recessed-gate AlGaN/GaN MOSFETs were fabricated using a novel recess etching method––TMAH wet etching with Cu ion implantation. This innovative approach injects Cu ions selectively into the target AlGaN layer, creating defects that
Externí odkaz:
https://doaj.org/article/3e647258f10a47059e3038da87040ad8
Autor:
Yan Gu, Xuecheng Jiang, Naiyan Lu, Jiarui Guo, Yushen Liu, Xifeng Yang, Weiying Qian, Xiangyang Zhang, Guoqing Chen, Tao Tao, Guofeng Yang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 518-523 (2023)
A 2-mercaptobutanedioic acid modified enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) device with a 5-fold gate was proposed for Fe3+ specific detection. The crystal quality and surface morphology of the epitaxial material were ch
Externí odkaz:
https://doaj.org/article/c10471d6dcee40faa68663f77b5c254b
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 167-173 (2023)
High temperature operation of enhancement-mode (E-mode) and depletion-mode (D-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) was demonstrated. By using the circular device structure, off-state current was
Externí odkaz:
https://doaj.org/article/d738a1ee438d40aaa1efdeb0815b5182
Autor:
Avila-Ramirez, Alan
Additive manufacturing technologies, including inkjet printing, have significantly transformed both research and industry, offering cost-effective and accessible solutions with innovative equipment capabilities. This study focuses on advancing p-type
Externí odkaz:
http://hdl.handle.net/10754/693495
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.