Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Enhai Zhao"'
Autor:
David C. Ahlgren, Chu-Hsin Liang, Hyotae Choo, Victor Chan, Jun Yuan, Jae-Eun Park, Enhai Zhao, Xiaobin Yuan, R. Lindsay, Huiling Shang, Jing Wang, Terence B. Hook, Sung-Joon Park
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 8:501-508
Gate-induced-drain-leakage (GIDL) current in 45-nm state-of-the-art MOSFETs is characterized in detail. For the current technology node with a 1.2-V power-supply voltage, the GIDL current is found to increase in MOSFETs with higher channel-doping lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f341c6381cfab32417c8d74655f50c01
https://doi.org/10.1109/tdmr.2008.2002350
https://doi.org/10.1109/tdmr.2008.2002350
Autor:
A.P.G. Prakash, Daniel M. Fleetwood, A. Phan, Jonathan A. Pellish, Robert A. Reed, Marco Bellini, Akil K. Sutton, Cheryl J. Marshall, Ronald D. Schrimpf, Bongim Jun, John D. Cressler, Paul W. Marshall, M.A. Carts, Raymond L. Ladbury, Enhai Zhao, R.M. Diestelhorst
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3166-3174
We present an investigation of the observed variations in the total dose tolerance of the emitter-base spacer and shallow trench isolation oxides in a commercial 200 GHz SiGe HBT technology. Proton, gamma, and X-ray irradiations at varying dose rates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7cebffe3b444341d96afd180ca83a90
https://doi.org/10.1109/tns.2006.885382
https://doi.org/10.1109/tns.2006.885382
Autor:
Enhai Zhao, Dimitar Kocoski, Alexei Sadovnikov, T. Krakowski, Monir El-Diwany, John D. Cressler
Publikováno v:
Solid-State Electronics. 50:1748-1755
We present an investigation of the dependence of low-frequency noise on device geometry in advanced npn silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs). The devices examined in this work have fixed emitter width ( W E = 0.4 μm),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6205ca26064d54e60667b9673cf59078
https://doi.org/10.1016/j.sse.2006.09.018
https://doi.org/10.1016/j.sse.2006.09.018
Autor:
Zhenrong Jin, John D. Cressler, B. El-Kareh, Enhai Zhao, Hiroshi Yasuda, Akil K. Sutton, R. Krithivasan, S. Balster
Publikováno v:
IEEE Transactions on Electron Devices. 53:329-338
We present a comprehensive investigation of low-frequency noise behavior in complementary (n-p-n + p-n-p) SiGe heterojunction bipolar transistors (HBTs). The low-frequency noise of p-n-p devices is higher than that of n-p-n devices. Noise data from d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::386bc02dc541236099e349de80d73d3e
https://doi.org/10.1109/ted.2005.862698
https://doi.org/10.1109/ted.2005.862698
Autor:
Enhai Zhao, John D. Cressler, S. Balster, B. El-Kareh, H. Yasuda, Paul W. Marshall, Robert A. Reed, B.M. Haugerud, Akil K. Sutton
Publikováno v:
IEEE Transactions on Nuclear Science. 51:3243-3249
We present the first study of the effects of radiation on low-frequency noise in a novel complementary (npn+pnp) silicon-germanium (SiGe) HBT BiCMOS technology. In order to manipulate the physical noise sources in these complementary SiGe HBTs, 63.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddf6d5d70eeda5190cff1e02f61cb3df
https://doi.org/10.1109/tns.2004.839138
https://doi.org/10.1109/tns.2004.839138
Autor:
Alvin J. Joseph, Qingqing Liang, John D. Cressler, Wei-Min Lance Kuo, Tianbing Chen, Enhai Zhao, Zhenrong Jin
Publikováno v:
IEEE Transactions on Electron Devices. 51:1825-1832
A comprehensive investigation of the high-temperature characteristics of advanced SiGe heterojunction bipolar transistors (HBTs) is presented, and demonstrates that, contrary to popular opinion, SiGe HBTs are potentially well-suited for many electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec037e98834d037e8cf16ff0917fe46f
https://doi.org/10.1109/ted.2004.836779
https://doi.org/10.1109/ted.2004.836779
Publikováno v:
Microelectronics Reliability. 44:89-94
1/f noise was measured on lateral bipolar PNP transistors over a temperature range of 220
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d860cb894d8e1e3e1f289035b724e99c
https://doi.org/10.1016/s0026-2714(03)00218-x
https://doi.org/10.1016/s0026-2714(03)00218-x
Publikováno v:
IEEE Transactions on Electron Devices. 49:2230-2236
1/f noise was measured on polysilicon-emitter bipolar n-p-n and p-n-p transistors over a temperature range of 173K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73eab92cb6c6e3f6cb4b11b6e0e4076f
https://doi.org/10.1109/ted.2002.805223
https://doi.org/10.1109/ted.2002.805223
Publikováno v:
Scopus-Elsevier
The principles and characteristics of rapid single flux quantum (RSFQ) circuits are discussed. According to these theories, we have designed RSFQ inverter, XOR cell and shift registers relative to the pseudo random generator. Based on these cells, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc26196b938c6e650b7c4cc9f9ef8eb2
https://doi.org/10.1007/bf03187017
https://doi.org/10.1007/bf03187017
Autor:
Xiaobin Yuan, Jae-Eun Park, Jin Wang, Enhai Zhao, David Ahlgren, Terence Hook, Jun Yuan, Victor Chan, Huiling Shang, Chu-Hsin Liang, Richard Lindsay, Sungjoon Park, Hyotae Choo
Publikováno v:
IEEE Transactions on Device and Materials Reliability.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c93e4a35473e1ded630bc6cc8a7283d1
https://doi.org/10.1109/tdmr.2008.923458
https://doi.org/10.1109/tdmr.2008.923458