Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Engin Arslan"'
Publikováno v:
Advances in Materials Science and Engineering, Vol 2014 (2014)
The 150 nm thick, (0001) orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm) template/(0001) sapphire substrate. The indium (x) concentration of the Al1−xInxN epitaxial layer
Externí odkaz:
https://doaj.org/article/470992d8a3fa44f2bcd0a9a0ba7c9fc8
Publikováno v:
European Journal of Applied Physics. 4:34-41
Scattering mechanisms that limit the mobility of two-dimensional electron gas (2DEG) in AlInGaN/GaN heterojunctions with three different barrier layer thicknesses of 37.2 (sample A), 10.6 (sample B) and 4.30 (sample C) nm were studied. Hall measureme
Autor:
Hemanta Sapkota, Engin Arslan
Publikováno v:
IEEE Transactions on Parallel and Distributed Systems. 33:3546-3557
Autor:
Fatma Özcan, İsmail Yüksel, Gizem Kılınç Kamacı, Nurdan Korkmaz, Engin Arslan, Yasin Demir, Koray Aydemir
Publikováno v:
Irish Journal of Medical Science (1971 -). 192:839-845
To determine the relationship between clinic and prosthesis-related characteristics and psychosocial adjustment, activity restriction, satisfaction with the prosthesis and quality of life in myoelectric prosthesis users with upper limb amputation.Thi
Autor:
Engin ARSLAN, Esin ERGİN
Publikováno v:
Akdeniz Spor Bilimleri Dergisi.
This study aims to determine the effect of 8-week core training on agility, strength performance and tennis skills in tennis players aged 10-14. 25 tennis players studying tennis at EA Tennis Academy participated in the study voluntarily. First of al
Publikováno v:
IEEE Sensors Journal
Sensitivity ( S ) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm) - Au(100 nm) /Ga2O3/ p -Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb7c3f11eb4c29e36951a21338201b40
https://hdl.handle.net/11693/111906
https://hdl.handle.net/11693/111906
Autor:
Nagmat Nazarov, Engin Arslan
Publikováno v:
2022 IEEE/ACM International Workshop on Innovating the Network for Data-Intensive Science (INDIS).
Publikováno v:
2022 IEEE International Conference on Cluster Computing (CLUSTER).
Autor:
Ahmed Alhussen, Engin Arslan
Publikováno v:
Journal of Parallel and Distributed Computing. 152:33-44
End-to-end integrity verification is used to avoid silent data corruption in file transfers by comparing the checksum of files at source and destination end points. However, it increases transfer times significantly as checksum computation requires r
Publikováno v:
2022 IEEE International Conference on Cyber Security and Resilience (CSR).