Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Engin Özkol"'
Autor:
Liqi Cao, Paul Procel, Alba Alcañiz, Jin Yan, Frans Tichelaar, Engin Özkol, Yifeng Zhao, Can Han, Guangtao Yang, Zhirong Yao, Miro Zeman, Rudi Santbergen, Luana Mazzarella, Olindo Isabella
Publikováno v:
Progress in Photovoltaics: research and applications
Thin films of transition metal oxides such as molybdenum oxide (MoOx) are attractive for application in silicon heterojunction solar cells for their potential to yield large short-circuit current density. However, full control of electrical propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9948c99b3416962c28054b108b27527
http://resolver.tudelft.nl/uuid:6501e113-6e58-4e62-908a-d4abdde56576
http://resolver.tudelft.nl/uuid:6501e113-6e58-4e62-908a-d4abdde56576
Publikováno v:
physica status solidi (a). 219:2100511
To increase the efficiency in p type wafer based silicon heterojunction SHJ technology, one of the most crucial challenges is the achievement of excellent surface passivation. Herein, chemical passivation techniques known for n type technology are su
Autor:
Engin Özkol, Patrick Amsalem, Rainer Eichberger, Rowan W. MacQueen, Martin Liebhaber, Jens Niederhausen, Katherine A. Mazzio, Mario Borgwardt, Florian Ruske, Klaus Lips, Clemens Gersmann, Moritz H. Futscher, Minh Hai Nguyen, Benjamin Daiber, Mathias Mews, Jörg Rappich, Bruno Ehrler, Dennis Friedrich
The rational combination of tetracene Tc with crystalline silicon c Si could greatly enhance c Si solar cell efficiencies via singlet fission. The Tc c Si energy level alignment ELA is thought to be central to controlling the required interface trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32a201f931b89dba6ac8cac4d38e3a4b
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=102595
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=102595
Autor:
Yifeng Zhao, Paul Procel, Engin Özkol, Luana Mazzarella, Pavol Šutta, Rostislav Medlín, Miro Zeman, Olindo Isabella
Publikováno v:
Physica Status Solidi. Rapid Research Letters, 14 (2020)(1)
Solar cells based on black silicon (b-Si) are proven to be promising in photovoltaics (PVs) by exceeding 22% efficiency. To reach high efficiencies with b-Si surfaces, the most crucial step is the effective surface passivation. Up to now, the highest
Publikováno v:
physica status solidi (a). 213:3142-3149
Publikováno v:
physica status solidi c. 12:1220-1223
Plasmonic interfaces integrated to the front, back and both surfaces of photovoltaic thin films show different degrees of enhancement of light trapping. Enhancements in the spectral dependence of photocurrent normalized to the power of excitation lig
Publikováno v:
physica status solidi c. 12:1215-1219
Aluminum doped zinc oxide (AZO) thin films are prepared on ultra-thin flexible glass and flexible polyethylene terephthalate (PET) substrates at room temperature by radio frequency (RF) magnetron sputtering. Optimization of films has been achieved by
Publikováno v:
physica status solidi c. 12:1206-1210
Surface texturing of transparent conducting oxides and plasmonic interfaces are two important techniques used separately in thin film solar cells to reduce reflection and enhance light-trapping. In this study, we merge the effects of Al:ZnO surface t
Summary Transition metal oxides/silicon heterocontact solar cells are the subject of intense research efforts owing to their simpler processing steps and reduced parasitic absorption as compared with the traditional silicon heterostructure counterpar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60222073f7e9c218ca9a56042e126274
https://aperta.ulakbim.gov.tr/record/33325
https://aperta.ulakbim.gov.tr/record/33325
Publikováno v:
Materials Science and Engineering: B. 196:28-34
Vertically-aligned nanostructured silicon films are deposited at room temperature on p-type silicon wafers and glass substrates by inductively-coupled, plasma-enhanced chemical vapor deposition (ICPCVD). The nanocrystalline phase is achieved by reduc