Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Engelmann, Hans Jürgen"'
Autor:
Xu, Xiaomo, Prüfer, Thomas, Wolf, Daniel, Engelmann, Hans-Jürgen, Bischoff, Lothar, Hübner, René, Heinig, Karl-Heinz, Möller, Wolfhard, Facsko, Stefan, von Borany, Johannes, Hlawacek, Gregor
Publikováno v:
Beilstein Journal of Nanotechnology 9 (2018) 2883-2892
For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-ener
Externí odkaz:
http://arxiv.org/abs/1910.04389
Autor:
Xu, Xiaomo, Heinig, Karl-Heinz, Möller, Wolfhard, Engelmann, Hans-Jürgen, Klingner, Nico, Gharbi, Ahmed, Tiron, Raluca, von Borany, Johannes, Hlawacek, Gregor
Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the tran
Externí odkaz:
http://arxiv.org/abs/1906.09975
Autor:
Liao, Zhongquan, Gall, Martin, Yeap, Kong Boon, Sander, Christoph, Mühle, Uwe, Gluch, Jürgen, Standke, Yvonne, Aubel, Oliver, Vogel, Norman, Hauschildt, Meike, Beyer, Armand, Engelmann, Hans-Jürgen, Zschech, Ehrenfried
Publikováno v:
In Microelectronic Engineering 2 April 2015 137:47-53
Autor:
Borany, Johannes von, Engelmann, Hans-Jürgen, Heinig, Karl-Heinz, Amat, Esteve, Hlawacek, Gregor, Klüpfel, Fabian J., Hübner, René, Möller, Wolfhard, Pourteau, Marie-Line, Rademaker, Guido, Rommel, Mathias, Baier, Leander, Pichler, Peter, Perez-Murano, Francesc, Tiron, Raluca
Publikováno v:
Semiconductor Science and Technology 38(2023)5, 055011
This study addresses the complementary metal-oxide-semiconductor-compatible fabrication of vertically stacked Si/SiO2/Si nanopillars (NPs) with embedded Si nanodots (NDs) as key functional elements of a quantum-dot-based, gate-all-around single-elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92ab2780b4dabe255fddb22255b644b8
https://www.hzdr.de/publications/Publ-34842-1
https://www.hzdr.de/publications/Publ-34842-1
Autor:
Wojcik, Henry, Hossbach, Christoph, Kubasch, Christoph, Verdonck, Patrick, Barbarin, Yohan, Merkel, Ulrich., Bartha, Johann W., Hübner, Rene, Engelmann, Hans-Jürgen, Friedemann, Michael
Publikováno v:
In Microelectronic Engineering October 2013 110:29-34
Autor:
Borany, J., Engelmann, Hans-Jürgen, Heinig, K.-H., Hlawacek, G., Hübner, R., Klüpfel, F., Möller, W., Pourteau, M.-L., Rademaker, G., Rommel, M., Baier, L., Pichler, P., Tiron, R.
Publikováno v:
Publication date: 2022-07-11 Open accessDOI: 10.14278/rodare.1804Versions: 10.14278/rodare.1805License: CC-BY-4.0
The data included in the publication are results of SET device simulations, Monte-Carlo simulations of physical processes (ion-beam mixing, phase seepration, Si nanodot formation) and micrographs taken by electron and ion microscopes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::6b578ace376a7530a98bf87834492a85
https://www.hzdr.de/publications/Publ-34906-1
https://www.hzdr.de/publications/Publ-34906-1
Autor:
Prüfer, Thomas, Möller, Wolfhard, Heinig, Karl-Heinz, Wolf, Daniel, Engelmann, Hans-Jürgen, Xu, Xiaomo, von Borany, Johannes
Publikováno v:
Journal of Applied Physics; 6/14/2019, Vol. 125 Issue 22, pN.PAG-N.PAG, 10p, 3 Color Photographs, 1 Diagram, 1 Chart, 4 Graphs
Autor:
Stegmann, Heiko, Özdöl, V. Burak, Koch, Christoph, van Aken, Peter A., Engelmann, Hans-Jürgen, Potapov, Pavel, Zschech, Ehrenfried
Publikováno v:
In Microelectronic Engineering 2008 85(10):2169-2171
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Publikováno v:
In Applied Surface Science 2005 252(1):185-188