Zobrazeno 1 - 10
of 1 111
pro vyhledávání: '"Eng K."'
Autor:
Aas-Eng, K., Alcazar, J.L., Bafort, C., Bazot, M., Bielen, D., Bokor, A., Bourne, T., Carmona, F., Di Giovanni, A., Djokovic, D., Egekvist, A., English, J., Exacoustos, C., Ferreira, H., Ferrero, S., Forstner, R., Freeman, S., Goncalves, M., Grimbizis, G., Guerra, A., Guerriero, S., Jansen, F.W., Jurkovic, D., Khazali, S., Leonardi, M., Maciel, C., Manganaro, L., Mueller, M., Nisolle, M., Noe, G., Reid, S., Roman, H., Rousset, P., Seyer Hansen, M., Singh, S., Thomas, V., Timmerman, D., Ulrich, U.A., Van den Bosch, T., Van Schoubroeck, D., Wattiez, A., Condous, George, Gerges, Bassem, Thomassin-Naggara, Isabelle, Becker, Christian M., Tomassetti, Carla, Krentel, Harald, van Herendael, Bruno J., Malzoni, Mario, Abrao, Mauricio S., Saridogan, Ertan, Keckstein, Joerg, Hudelist, Gernot
Publikováno v:
In The Journal of Minimally Invasive Gynecology July 2024 31(7):557-573
Autor:
Kerckhoff, J., Sun, B., Fong, B. H., Jones, C., Kiselev, A. A., Barnes, D. W., Noah, R. S., Acuna, E., Akmal, M., Ha, S. D., Wright, J. A., Thomas, B. J., Jackson, C. A. C., Edge, L. F., Eng, K., Ross, R. S., Ladd, T. D.
Publikováno v:
PRX Quantum 2, 010347 (2021)
We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar
Externí odkaz:
http://arxiv.org/abs/2009.08079
Autor:
Jones, A. M., Pritchett, E. J., Chen, E. H., Keating, T. E., Andrews, R. W., Blumoff, J. Z., De Lorenzo, L. A., Eng, K., Ha, S. D., Kiselev, A. A., Meenehan, S. M., Merkel, S. T., Wright, J. A., Edge, L. F., Ross, R. S., Rakher, M. T., Borselli, M. G., Hunter, A.
Publikováno v:
Phys. Rev. Applied 12, 014026 (2019)
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the
Externí odkaz:
http://arxiv.org/abs/1809.08320
Autor:
Condous, G., Gerges, B., Thomassin‐Naggara, I., Becker, C., Tomassetti, C., Krentel, H., van Herendael, B. J., Malzoni, M., Abrao, M. S., Saridogan, E., Keckstein, J., Hudelist, G., Aas‐Eng, K., Alcazar, J. L., Bafort, C., Bazot, M., Bielen, D., Bokor, A., Bourne, T., Carmona, F.
Publikováno v:
Ultrasound in Obstetrics & Gynecology; Jul2024, Vol. 64 Issue 1, p129-144, 16p
Autor:
Reed, M. D., Maune, B. M., Andrews, R. W., Borselli, M. G., Eng, K., Jura, M. P., Kiselev, A. A., Ladd, T. D., Merkel, S. T., Milosavljevic, I., Pritchett, E. J., Rakher, M. T., Ross, R. S., Schmitz, A. E., Smith, A., Wright, J. A., Gyure, M. F., Hunter, A. T.
Publikováno v:
Phys. Rev. Lett. 116, 110402 (2016)
We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the charge-state anti-cr
Externí odkaz:
http://arxiv.org/abs/1508.01223
Autor:
Jock, R. M., Shankar, S., Tyryshkin, A. M., He, Jianhua, Eng, K., Childs, K. D., Tracy, L. A., Lilly, M. P., Carroll, M. S., Lyon, S. A.
Publikováno v:
Appl. Phys. Lett. 100, 023503 (2012)
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laborato
Externí odkaz:
http://arxiv.org/abs/1110.0757
Autor:
Tracy, L. A., Nordberg, E. P., Young, R. W., Pinilla, C. Borras, Stalford, H. L., Eyck, G. A. Ten, Eng, K., Childs, K. D., Stevens, J., Lilly, M. P., Eriksson, M. A., Carroll, M. S.
Publikováno v:
Appl. Phys. Lett. 97, 192110 (2010)
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages appl
Externí odkaz:
http://arxiv.org/abs/1011.0034
When designing and studying circuits operating at cryogenic temperatures understanding local heating within the circuits is critical due to the temperature dependence of transistor and noise behavior. We have investigated local heating effects of a C
Externí odkaz:
http://arxiv.org/abs/1008.3409
Autor:
Akturk, A., Eng, K., Hamlet, J., Potbhare, S., Longoria, E., Young, R., Peckerar, M., Gurrieri, T., Carroll, M. S., Goldsman, N.
Compact modeling of MOSFETs from a 0.35 micron SOI technology node operating at 4 K is presented. The Verilog-A language is used to modify device equations for BSIM models and more accurately reproduce measured DC behavior, which is not possible with
Externí odkaz:
http://arxiv.org/abs/1001.3353
Autor:
Nordberg, E. P., Stalford, H. L., Young, R., Eyck, G. A. Ten, Eng, K., Tracy, L. A., Childs, K. D., Wendt, J. R., Grubbs, R. K., Stevens, J., Lilly, M. P., Eriksson, M. A., Carroll, M. S.
Publikováno v:
Appl. Phys. Lett. 95, 202102 (2009)
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system.
Externí odkaz:
http://arxiv.org/abs/0909.3547