Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Eng Huat Toh"'
Autor:
Eng Huat Toh, Tam Lyn Tan, Jian-Yi Wong, Patrick Cao, Praveen Arikath, Mohd Nurul Islam, Ping Zheng, Yongshun Sun, Mathew Shajan, Elgin Quek, R.K. Jain
Publikováno v:
IEEE Sensors Journal. 22:11256-11263
This paper presents three dimensional (3-D) Hall sensors that are capable of detecting magnetic fields in three axis directions and are realized on 180BCDLite® technology with one or two mask adders. The 3-D Hall sensor architecture adopts a modular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e5cec1dff4583202365f75cb3175c2
https://doi.org/10.1109/jsen.2021.3090211
https://doi.org/10.1109/jsen.2021.3090211
Autor:
Fei Lyu, Zhenyan Zhang, Eng-Huat Toh, Xinfu Liu, Yinjie Ding, Yifan Pan, Chengjie Li, Li Li, Jin Sha, Hongbing Pan
Publikováno v:
Sensors, Vol 15, Iss 1, Pp 672-686 (2014)
This paper studies the effects of the covering layers on the performance of a cross-like Hall plate. Three different structures of a cross-like Hall plate in various sizes are designed and analyzed. The Hall plate sensitivity and offset are character
Externí odkaz:
https://doaj.org/article/29e85f5ddd4142ba9df93650c410c2d0
Autor:
Wen Siang Lew, Putu Andhita Dananjaya, Eng Huat Toh, Samuel C. W. Chow, Kuan Hong Tan, Desmond Jia Jun Loy, Somsubhra Chakrabarti
Publikováno v:
ACS Applied Electronic Materials. 2:3160-3170
We report a switching model that directly explains the change in activation energy (EAC) at different RESET stop voltages (Vstop) in HfO2-based resistive random access memory devices. The dependenc...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::123a86bbb5bddba5a24ca214a219d68a
https://doi.org/10.1021/acsaelm.0c00515
https://doi.org/10.1021/acsaelm.0c00515
Autor:
Samuel Chen Wai Chow, Putu Andhita Dananjaya, Jia Min Ang, Desmond Jia Jun Loy, Jia Rui Thong, Siew Wei Hoo, Eng Huat Toh, Wen Siang Lew
Publikováno v:
Applied Surface Science. 608:155233
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::646031d3c21e34abaaea1851e9b4b098
https://doi.org/10.1016/j.apsusc.2022.155233
https://doi.org/10.1016/j.apsusc.2022.155233
Autor:
H. Yoon, Vinayak Bharat Naik, J. Kwon, K. Yamane, L. Pu, J. H. Lim, S. T. Woo, O. Kallensee, J. Hwang, Y. S. You, S. Ong, Jeff J. Xu, L. Zhang, Tae Young Lee, S. H. Jang, S. K L. C. Goh, F. Tan, Eng Huat Toh, D. Zeng, N. Balasankaran, Soh Yun Siah, Hemant Dixit, T. H. Chan, N. L. Chung, R. Low, G. Congedo, R. Chao, Y. Otani, Johannes Mueller, C.G. Lee, T. Merbeth, J. W. Ting, L. Y. Hau, K. W. Gan, Y. Huang, A. Vogel, E. Quek, C. Chiang, Behtash Behin-Aein, W. P. Neo, T. Ling, V. Kriegerstein, Chim Seng Seet, Jen Shuang Wong, B. Pfefferling
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We demonstrate highly reliable and mass-production ready 22nm FD-SOI 40Mb embedded-MRAM for industrial-grade (-40~125°C) applications. This technology having 5x solder reflows compatibility stack has passed JEDEC standard qualification (ECC-OFF) wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2297be3b6e345d353ce3138acd58f0cd
https://doi.org/10.1109/iedm13553.2020.9371935
https://doi.org/10.1109/iedm13553.2020.9371935
Autor:
Fei Lyu, Xinfu Liu, Yinjie Ding, Eng-Huat Toh, Zhenyan Zhang, Yifan Pan, Zhen Wang, Chengjie Li, Li Li, Jin Sha, Hongbing Pan
Publikováno v:
Sensors, Vol 16, Iss 1, p 106 (2016)
This work studies the effects of an aluminum covering on the performance of cross-like Hall devices. Four different Hall sensor structures of various sizes were designed and fabricated. The sensitivity and offset of the Hall sensors, two key points i
Externí odkaz:
https://doaj.org/article/bba3a7705a7e4991b2072a35e1f95ec4
Autor:
Jian-Yi Wong, Praveen Arikath, Mathew Shajan, Eng Huat Toh, Ping Zheng, Yongshun Sun, Tam Lyn Tan, Patrick Cao, Elgin Quek, R.K. Jain, Mohd Nurul Islam
Publikováno v:
2020 IEEE SENSORS.
Modular three dimensional (3-D) Hall sensors are demonstrated in 180BCDLite® technology. It is CMOS integrated with one or two mask adders. Best-in-class current– related sensitivity S I >385 V/A*T and voltage–related sensitivity S V >50 mV/V*T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::845db8d7d05ae16f04de272a44cb1f48
https://doi.org/10.1109/sensors47125.2020.9278745
https://doi.org/10.1109/sensors47125.2020.9278745
Autor:
Eng Huat Toh, Desmond Jia Jun Loy, Samuel Chen Wai Chow, Kunqi Hou, Wen Siang Lew, Somsubhra Chakrabarti, Mun Yin Chee, Kuan Hong Tan, Yong Chiang Ee, Gerard Joseph Lim, Jia Min Ang, Putu Andhita Dananjaya, Jia Rui Thong
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
A multi-level state HfO 2 -based resistive switching model is reported, where the increase in stopping voltage (V stop ) and thus activation energy (E AC ) is attributed to the depletion of oxygen vacancy (V o ) concentration (n c ) during reset. Hop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c6aa34845712af4e51e99da3425e8bd
https://doi.org/10.1109/snw50361.2020.9131623
https://doi.org/10.1109/snw50361.2020.9131623
Autor:
Vinayak Bharat Naik, S. L Tan, W. P. Neo, J. H. Lim, Kevin Khua, T. Ling, J. Hwang, Y. S. You, R. Chao, Chim Seng Seet, L. C. Goh, S. T. Woo, K. Yamane, D. Zeng, R. Low, Naganivetha Thiyagarajah, Behtash Behin-Aein, N. Balasankaran, S. H. Jang, Eng Huat Toh, J. W. Ting, Tae Young Lee, E. Quek, L. Zhang, K. Sivabalan, L. Y. Hau, Y. Otani, S. Ong, Soh Yun Siah, N. L. Chung, J. Kwon
Publikováno v:
IRPS
In the era of embedded MRAM (eMRAM) technology evolution for the replacement of eFlash and SRAM, the correlation between magnetic immunity (MI) and eMRAM reliability must be well understood to realize the mass production. In this paper, we have class
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baaf7f37e50fcc0edf972ac185f34e58
https://doi.org/10.1109/irps45951.2020.9128317
https://doi.org/10.1109/irps45951.2020.9128317
Autor:
Desmond Loy Jia Jun, Eng Huat Toh, Nagaraj Lakshmana Prabhu, Putu Andhita Dananjaya, Nagarajan Raghavan, Wen Siang Lew
Publikováno v:
Electronics
Volume 9
Issue 3
Electronics, Vol 9, Iss 3, p 414 (2020)
Volume 9
Issue 3
Electronics, Vol 9, Iss 3, p 414 (2020)
In this work, we explore the use of the resistive random access memory (RRAM) device as a synapse for mimicking the trained weights linking neurons in a deep learning neural network (DNN) (AlexNet). The RRAM devices were fabricated in-house and subje
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c05c1a2386ced2d02fc72b26e4cd1a95