Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Eng Chye Chua"'
Publikováno v:
IRPS
Thermal expansion mismatches pose significant challenges to the reliability of flip chip-Ball grid array (FC-BGA) package technology. Technology advancement for FC-BGA packages drives towards thinner substrates, smaller bump pitch and high flow under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f6612895eff6923a1af25fc23ad04e8
https://doi.org/10.1109/irps.2019.8720597
https://doi.org/10.1109/irps.2019.8720597
Autor:
Ryan Scott Smith, Shan Gao, SeokHo Na, MyeongJin Kim, Eng Chye Chua, Seungman Choi, Bob Shih-Wei Kuo, YunHee Kim, Jae Kyu Cho, Miguel Jimarez, JinSuk Jeong, JaeWook Shin, Sukeshwar Kannan
Publikováno v:
2015 IEEE 65th Electronic Components and Technology Conference (ECTC).
The need for high performance and multi-functional devices drove silicon manufacturers to introduce ultra-low dielectric constant (ULK) materials into the back-end-of-line (BEOL) of silicon manufacturing. This innovative technology resulted in perfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73b0d9f554c0c643cb23684591d973f0
https://doi.org/10.1109/ectc.2015.7159564
https://doi.org/10.1109/ectc.2015.7159564
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
The Time Dependent Dielectric Breakdown (TDDB) of Ultra-Low-κ (ULK) (κ=2.7) and porous ULK SiCOH (κ=2.55) was systematically investigated using both Constant Current Stress (CCS) and Constant Voltage Stress (CVS) method on our 32nm and 28nm techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5094bfc4c1dc7852c84501935d5e4c
https://doi.org/10.1109/irps.2014.6860614
https://doi.org/10.1109/irps.2014.6860614
Publikováno v:
2010 IEEE International Reliability Physics Symposium.
Effect of backend interconnect critical dimension variation on IMD TDDB is studied. Statistical data shows that low-k dielectric TDDB time to failure correlates well with leakage current, which reflects actual trench-to-trench or trench-to-via spacin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d98e8ff2e57c2f02015033b42e9711e3
https://doi.org/10.1109/irps.2010.5488703
https://doi.org/10.1109/irps.2010.5488703
Publikováno v:
Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06920bac50342df366b975ab2db1d196
https://doi.org/10.1109/ipfa.2002.1025631
https://doi.org/10.1109/ipfa.2002.1025631
Publikováno v:
Proceedings of the 9th International Symposium on the Physical & Failure Analysis of Integrated Circuits (Cat. No.02TH8614); 2002, p129-134, 6p