Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Enea Bianda"'
Autor:
Ivana Kovacevic-Badstuebner, Salvatore Race, Ulrike Grossner, Elena Mengotti, Christoph Kenel, Enea Bianda, Joni Jormanainen
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4f7e1e1a5a60ef4273dec224a676176
https://doi.org/10.1109/irps48203.2023.10117650
https://doi.org/10.1109/irps48203.2023.10117650
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc662f70430f1e8fec2b4f4d0b0b04de
https://doi.org/10.1109/irps48203.2023.10118084
https://doi.org/10.1109/irps48203.2023.10118084
Autor:
I. Kovacevic-Badstuebner, S. Race, T. Ziemann, S. Tiwari, U. Grossner, Elena Mengotti, Enea Bianda, Joni Jormanainen
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1786e282a5efe0237185ccf0cc743f5d
https://doi.org/10.1109/irps48227.2022.9764498
https://doi.org/10.1109/irps48227.2022.9764498
Autor:
Stephan Wirths, Andrei Mihaila, Marco Bellini, Enea Bianda, Lars Knoll, G. Romano, Yulieth Arango, Lukas Kranz, Vinoth Sundaramoorthy
Publikováno v:
Materials Science Forum. 1004:933-938
Silicon Carbide JFETs with low on-state resistance are suitable for a number of high power applications. The static, dynamic and short circuit characterization of 600 V SiC Trench JFETs are reported in this paper. Typical JFETs fabricated with a 1.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecd398d8b738786bf7d050d0a06639ac
https://doi.org/10.4028/www.scientific.net/msf.1004.933
https://doi.org/10.4028/www.scientific.net/msf.1004.933
Publikováno v:
Materials Science Forum. 1004:1033-1044
In this paper, robustness and reliability differences related to the performance of the gate oxide of commercially-available 1200 V-rated planar and trench SiC MOSFETs have been investigated. Due to a thin gate oxide in SiC MOSFETs and to a naturally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cf42a8688ee42ab4cdc9bb4f747e96d
https://doi.org/10.4028/www.scientific.net/msf.1004.1033
https://doi.org/10.4028/www.scientific.net/msf.1004.1033
Publikováno v:
Materials Science Forum. 1004:814-821
The aim of this study is to investigate the main contributing factors to the degradation of the intrinsic body diode in SiC MOSFETs, caused by the expansion of stacking faults (SFs) from the substrate into the epitaxial layer, and how it affects thei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91fd0d2bd065159f45d3ff7338709d0e
https://doi.org/10.4028/www.scientific.net/msf.1004.814
https://doi.org/10.4028/www.scientific.net/msf.1004.814
Autor:
Salvatore Race, Ivana Kovacevic-Badstuebner, Michel Nagel, Thomas Ziemann, Shweta Tiwari, Elena Mengotti, Enea Bianda, Joni Jormanainen, Ulrike Grossner
Publikováno v:
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d11f5855c5d8b1b44d6bcdcab565c516
https://doi.org/10.1109/therminic52472.2021.9626395
https://doi.org/10.1109/therminic52472.2021.9626395
Autor:
Francisco Canales, Victor Soler, Lukas Kranz, Giovanni Alfieri, Philippe Godignon, Enea Bianda, Lars Knoll, Uwe Badstübner, Andrei Mihaila, Munaf Rahimo
Publikováno v:
Materials Science Forum. 963:621-624
This paper presents a dynamic investigation of the body diode behavior of MOSFETs rated for 3.3kV applications. The body diodes of MOSFETs with different cell designs and pitch sizes have been used. The turn-off behavior of the body diode is compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da3bce709dcc736a93a5159e3c1394a
https://doi.org/10.4028/www.scientific.net/msf.963.621
https://doi.org/10.4028/www.scientific.net/msf.963.621
Autor:
Enea Bianda, Philippe Godignon, Andrei Mihaila, Victor Soler, Lukas Kranz, Jose Rebollo, Maria Cabello, Josep Montserrat, Lars Knoll, Viorel Banu
Publikováno v:
Materials Science Forum. 963:768-772
This work addresses the electrical behaviour of high-voltage (HV) SiC MOSFETs, being the main motivation to check their robustness. Large area (25 mm2) devices rated for 3.3 kV applications were fabricated with a special process for the gate oxide fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbf90677959d9c75f23f52c9d20fff1c
https://doi.org/10.4028/www.scientific.net/msf.963.768
https://doi.org/10.4028/www.scientific.net/msf.963.768
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The performance of 1.2kV SiC power MOSFETs is still hampered by the naturally imperfect SiC/SiO 2 MOS-interface. The correlated high density of interface traps results in threshold voltage (VTH) shifts and VTH-instabilities that must be carefully tak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f971047fa6db27245362c38f3b797fd
https://doi.org/10.23919/ispsd50666.2021.9452290
https://doi.org/10.23919/ispsd50666.2021.9452290