Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Endo Takafumi"'
Autor:
Shitara, Hitoshi ∗, Tajika, Tsuyoshi, Kuboi, Takuro, Tsuyoshi Ichinose, Sasaki, Tsuyoshi, Hamano, Noritaka, Endo, Takafumi, Masataka Kamiyama, Ryosuke Miyamoto, Kurumi Nakase, Atsushi Yamamoto, Kobayashi, Tsutomu, Takagishi, Kenji, Chikuda, Hirotaka
Publikováno v:
In JSES International January 2022 6(1):191-197
Autor:
Shitara, Hitoshi ∗, Tajika, Tsuyoshi, Kuboi, Takuro, Ichinose, Tsuyoshi, Sasaki, Tsuyoshi, Hamano, Noritaka, Endo, Takafumi, Kamiyama, Masataka, Miyamoto, Ryosuke, Nakase, Kurumi, Yamamoto, Atsushi, Kobayashi, Tsutomu, Takagishi, Kenji, Chikuda, Hirotaka
Publikováno v:
In Journal of Shoulder and Elbow Surgery September 2021 30(9):2120-2126
Akademický článek
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Akademický článek
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Akademický článek
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Autor:
Saito Daigo, Karasawa Ryo, Hashimoto Keisuke, Hirokazu Nishimaki, Tokunaga Hikaru, Endo Takafumi, Rikimaru Sakamoto
Publikováno v:
Journal of Photopolymer Science and Technology. 30:373-378
In advanced lithography technology, high planarity SOC (Spin-on-Carbon) materials which can planarize topography substrates are required in order to obtain enough process margin. We developed photo curing SOC (P-SOC) materials which can be cross-link
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61ec7055adf8843a77bf4c7d3e9da1ef
https://doi.org/10.2494/photopolymer.30.373
https://doi.org/10.2494/photopolymer.30.373
Autor:
Syuhei Shigaki, Ho Bang Ching, Yaguchi Hiroaki, Ryuji Onishi, Suguru Sassa, Endo Takafumi, Noriaki Fujitani, Rikimaru Sakamoto
Publikováno v:
ECS Transactions. 60:263-271
For below Hp22nm generation, Hard-mask strategy is one of the key issues to achieve the good balance for Lithography and Etching performance. The thickness of resist should be thicker enough to obtain the etching margin for the substrate etching. How
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345c909f4f4f1a5288a4459d80b0c5ef
https://doi.org/10.1149/06001.0263ecst
https://doi.org/10.1149/06001.0263ecst
Publikováno v:
ECS Transactions. 34:257-262
For the next generation lithography (NGL), several technologies have been proposed to achieve the 22nm-node devices and beyond. Extreme ultraviolet (EUV) lithography is one of the candidates for the next generation lithography. For lithography proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14e082f3a66a41e397adb548b4afaec4
https://doi.org/10.1149/1.3567590
https://doi.org/10.1149/1.3567590
Autor:
Masakazu Kato, Shigeo Kimura, Daisuke Maruyama, Bang-Ching Ho, Rikimaru Sakamoto, Tomohisa Ishida, Noriaki Fujitani, Ryuji Onishi, Yoshiomi Hiroi, Endo Takafumi
Publikováno v:
ECS Transactions. 27:479-487
Double patterning process with ArF immersion lithography has been developed as one of the most promising candidate for hp32 node and beyond. However complicated process flow and cost of ownership are the critical issue for this process. LELE (Litho-E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84dd5f289f3e23ac6528833a5e427d27
https://doi.org/10.1149/1.3360663
https://doi.org/10.1149/1.3360663
Publikováno v:
Journal of Photopolymer Science and Technology. 21:451-455
The density, absorbance, and outgassing of underlayer films and the effect of EUV irradiation on such films were evaluated. The relationship between density and calculated EUV absorbance was determined. Films having lower film density have lower EUV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0e3f4d9803967b0e16afa3a4df8b46
https://doi.org/10.2494/photopolymer.21.451
https://doi.org/10.2494/photopolymer.21.451