Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Ender Savrun"'
Autor:
Ashley L. Bissell, James M. Christopher, Alex G. Orlowski, Robert T. Forsyth, Ender Savrun, Ching-Fong Chen, Timothy J. Baker, Ron A. Synowicki, Eric L. Tegtmeier
Publikováno v:
Journal of the American Ceramic Society. 103:6666-6676
Autor:
Kenneth Armijo, Lawrence Johnson, Charles Walker, Charles Andraka, James Scott, Dennis De Smet, Peter Kinney, Brad Hoff, Anthony Baros, Ender Savrun
Publikováno v:
Proposed for presentation at the International Brazing and Soldering Conference 2021 in.
Autor:
Haylie Orozco, Brad W. Hoff, Steven C. Hayden, Frederick W. Dynys, Anthony E. Baros, Zane Cohick, Ender Savrun, Ian M. Rittersdorf, Rachael O. Grudt, Maxwell Telmer, S. C. Schaub
Publikováno v:
Measurement Science and Technology. 33:015901
An apparatus for measuring the W-band (75–110 GHz) complex permittivity of dielectrics at 1000 °C was developed. This apparatus allows for measurements at approximately twice the temperature of previously published high temperature free-space meas
Publikováno v:
2019 IEEE Pulsed Power & Plasma Science (PPPS).
In large machines, such as accelerators and high power microwave systems, it is common to implement pulsed power technology. Pulsed power attempts to deliver large amounts of power in a short amount of time. This is done by storing high voltage and d
Autor:
Ender Savrun, Jeffrey P. Calame
Publikováno v:
2018 IEEE International Vacuum Electronics Conference (IVEC).
The microwave dielectric properties of new aluminum-nitride-based microwave absorbing ceramic composites for use in vacuum electronics and particle accelerators are studied in the 0.5-18 GHz frequency band. The various physical mechanisms contributin
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:000028-000032
We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 °C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 °C, eventually achieving near or
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:000047-000052
Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 °C during laboratory characterization, and subsequently evaluated in a combustor rig op
Publikováno v:
IEEE Electron Device Letters. 36:174-176
Uncooled MEMS-based 4H-SiC Wheatstone bridge configured piezoresistive pressure sensors were demonstrated from 23 °C to 800 °C. The full-scale output (FSO) voltage exhibited gradual decrease with increasing temperature from 23 °C to 400 °C, then
Autor:
Ender Savrun, Stephanie J. Sawhill
Publikováno v:
Ceramics International. 38:1981-1989
Cubic tantalum oxyfluoride (TaO2F) powders were synthesized and consolidated by hot pressing. The effects of sodium fluoride (NaF) and lithium fluoride (LiF) sintering aids on the densification and microstructure of TaO2F were investigated. Hot press
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2012:000099-000103
We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 °C. The previously observed maximum drift of ± 10 mV of the reference offset voltage at 600 °C was redu