Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Enchao Peng"'
Autor:
Jiang Lijuan, Hongling Xiao, Quan Wang, Jiamin Gong, Li Baiquan, Enchao Peng, Haibo Yin, Chun Feng, He Kang, Xun Hou, Xiaoliang Wang, Hong Chen, Zhanguo Wang, Cuimei Wang, Shenqi Qu
Publikováno v:
physica status solidi (a). 212:1158-1161
In this paper, AlGaN/GaN- and GaN/AlGaN/GaN-based Schottky barrier diodes (SBDs) were fabricated and studied for comparison. The recorded electrical characteristics of the devices show that the introduction of a GaN cap layer can evidently reduce the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d62983197d495ebf986f817e6ea76a5
https://doi.org/10.1002/pssa.201431719
https://doi.org/10.1002/pssa.201431719
Autor:
Junda Yan, Xiaoliang Wang, Quan Wang, Shenqi Qu, Hongling Xiao, Enchao Peng, He Kang, Cuimei Wang, Chun Feng, Haibo Yin, Lijuan Jiang, Baiquan Li, Zhanguo Wang, Xun Hou
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 5, p054502-1-054502-7, 7p, 13 Graphs
Autor:
Hongling Xiao, Cuimei Wang, Wei Li, Shenqi Qu, Quan Wang, Xun Hou, Xiaoliang Wang, Zhanguo Wang, Enchao Peng
Publikováno v:
Journal of Alloys and Compounds. 605:113-117
The high electron mobility transistor (HEMT) structure employing novel In x Al 1 − x N/AlN multiple-quantum-wells (MQWs) as barrier layer is presented. The two-dimensional electron gas (2DEG) characteristics of (In x Al 1 − x N/AlN)MQWs/GaN heter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8898827127f147e9ce6721067b514797
https://doi.org/10.1016/j.jallcom.2014.03.154
https://doi.org/10.1016/j.jallcom.2014.03.154
Autor:
Hong Chen, Jiang Lijuan, Cuimei Wang, Xun Hou, Xiaoliang Wang, Hongling Xiao, Enchao Peng, Zhanguo Wang, Chun Feng, Haibo Yin
Publikováno v:
Journal of Crystal Growth. 383:25-29
High electron mobility transistors (HEMTs) structures with GaN, Al0.025Ga0.975N and Al0.04Ga0.96N high resistivity (HR) buffers were grown on sapphire by metal organic chemical vapor deposition (MOCVD). The structural and electrical properties of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e51807827e90294f959c53edca17d5
https://doi.org/10.1016/j.jcrysgro.2013.07.017
https://doi.org/10.1016/j.jcrysgro.2013.07.017
Autor:
Enchao Peng, Hong Chen, Chun Feng, Jiang Lijuan, Zhanguo Wang, Cuimei Wang, Xiaoliang Wang, Hongling Xiao, Haibo Yin, Xun Hou
Publikováno v:
Journal of Alloys and Compounds. 576:48-53
This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f7d906fd097292f69e17d5706964249
https://doi.org/10.1016/j.jallcom.2013.04.085
https://doi.org/10.1016/j.jallcom.2013.04.085
Autor:
Enchao Peng, Hongling Xiao, Yang Bi, Chun Feng, Jiang Lijuan, Cuimei Wang, Cuibai Yang, Defeng Lin, Xiaoliang Wang
Publikováno v:
Applied Physics A. 104:1211-1216
This is a theoretical study of the 1st AlN interlayer and the 2nd GaN layer on properties of the Al0.3Ga0.7N/2nd AlN/2nd GaN/1st AlN/1st GaN HEMT structure by self-consistently solving coupled Schrodinger and Poisson equations. Our calculation shows
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6c67a071cf555d462a3bc7264b3129b
https://doi.org/10.1007/s00339-011-6446-5
https://doi.org/10.1007/s00339-011-6446-5
Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT
Autor:
He Kang, Junda Yan, Shenqi Qu, Chun Feng, Hongling Xiao, Jiang Lijuan, Xun Hou, Cuimei Wang, Haibo Yin, Hong Chen, Xiaoliang Wang, Zhanguo Wang, Enchao Peng
Publikováno v:
The European Physical Journal Applied Physics. 68:10105
We present calculation of critical voltage for AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layer. The calculation includes mechanical stress and relaxable energy in the GaN/AlGaN barrier layer. Under high voltage conditions, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::953f6de71fadee663648dbc47de65095
https://doi.org/10.1051/epjap/2014140019
https://doi.org/10.1051/epjap/2014140019
Autor:
Shenqi Qu, Chun Feng, Hongling Xiao, Quan Wang, Cuimei Wang, Enchao Peng, He Kang, Zhanguo Wang, Haibo Yin, Junda Yan, Li Baiquan, Xun Hou, Xiaoliang Wang, Jiang Lijuan
Publikováno v:
Journal of Applied Physics. 116:054502
In this paper, a numerical study of In x Ga1 − x N/Al y Ga1 − y N/GaN heterostructure is presented. The dependence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) sheet densities on variables, such as In x Ga1 − x N l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1c9e2b20e349122230a9f954df10ece
https://doi.org/10.1063/1.4891732
https://doi.org/10.1063/1.4891732
Autor:
Jiang Lijuan, Zhanguo Wang, Chun Feng, Hongling Xiao, Enchao Peng, Shenqi Qu, He Kang, Haibo Yin, Hong Chen, Cuimei Wang, Xiaoliang Wang, Xun Hou
Publikováno v:
The European Physical Journal Applied Physics. 66:20101
A theoretical study of transconductance characteristics ( g m − V gs profile) of AlGaN/GaN high electron mobility transistors (HEMTs) with a graded AlGaN layer is given in this paper. The calculations were made using a self-consistent solution of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d030c958561079ef78309ea497d8824f
https://doi.org/10.1051/epjap/2014130368
https://doi.org/10.1051/epjap/2014130368
Autor:
Shenqi Qu, Zhanguo Wang, Jiang Lijuan, Hong Chen, Xiaoliang Wang, Haibo Yin, Chun Feng, Hongling Xiao, Cuimei Wang, Enchao Peng, Xun Hou, He Kang
Publikováno v:
Journal of Applied Physics. 114:154507
This is a theoretical study of GaN-based heterostructures with unintentionally doped (UID) GaN channel layer and high-resistivity (HR) GaN buffer layer doped by deep acceptors. Self-consistent Schrodinger-Poisson (SP) numerical simulation shows that,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ef713c61ea3aaa8a1478edf5b839a9f
https://doi.org/10.1063/1.4825318
https://doi.org/10.1063/1.4825318