Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Enaldiev, Vladimir"'
Autor:
Gao, Yunze, Weston, Astrid, Enaldiev, Vladimir, Castanon, Eli, Wang, Wendong, Nunn, James E., Carl, Amy, De Latour, Hugo, Li, Xiao, Summerfield, Alex, Kretinin, Andrey, Clark, Nicholas, Wilson, Neil, Falko, Vladimir I., Gorbachev, Roman
Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out
Externí odkaz:
http://arxiv.org/abs/2403.09399
Publikováno v:
Nano Lett. 2023, 23, 10
Ferroelectricity (Valasek, J. Phys. Rev. 1921, 17, 475) - a spontaneous formation of electric polarisation - is a solid state phenomenon, usually, associated with ionic compounds or complex materials. Here we show that, atypically for elemental solid
Externí odkaz:
http://arxiv.org/abs/2305.10896
Autor:
Molino, Laurent, Aggarwal, Leena, Enaldiev, Vladimir, Plumadore, Ryan, Falko, Vladimir, Luican-Mayer, Adina
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition metal dic
Externí odkaz:
http://arxiv.org/abs/2210.03074
We study the dielectric response of few layered crystals of various transition metal dichalcogenides (TMDs) and hexagonal Boron Nitride (hBN). We showed that the out-of-plane polarizability of a multilayer crystal (which characterizes response to the
Externí odkaz:
http://arxiv.org/abs/2206.09183
Autor:
Weston, Astrid, Castanon, Eli G, Enaldiev, Vladimir, Ferreira, Fabio, Bhattacharjee, Shubhadeep, Xu, Shuigang, Corte-Leon, Hector, Wu, Zefei, Clark, Nickolas, Summerfield, Alex, Hashimoto, Teruo, Gao, Yunze, Wang, Wendong, Hamer, Matthew, Read, Harriet, Fumagalli, Laura, Kretinin, Andrey V, Haigh, Sarah J., Kazakova, Olga, Geim, A. K., Fal'ko, Vladimir I., Gorbachev, Roman
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van de
Externí odkaz:
http://arxiv.org/abs/2108.06489
Publikováno v:
Phys. Rev. B 104, 085402 (2021)
We use a hybrid k dot p theory - tight binding (HkpTB) model to describe interlayer coupling simultaneously in both Bernal and twisted graphene structures. For Bernal-aligned interfaces, HkpTB is parametrized using the full Slonczewski-Weiss-McClure
Externí odkaz:
http://arxiv.org/abs/2105.00086
Autor:
Ferreira, Fábio, Magorrian, Samuel, Enaldiev, Vladimir, Ruiz-Tijerina, David, Fal'ko, Vladimir
Publikováno v:
Appl. Phys. Lett. 118, 241602 (2021)
Twistronic assembly of 2D materials employs the twist angle between adjacent layers as a tuning parameter for designing the electronic and optical properties of van der Waals heterostructures. Here, we study how interlayer hybridization, weak ferroel
Externí odkaz:
http://arxiv.org/abs/2103.06320
Autor:
Weston, Astrid, Zou, Yichao, Enaldiev, Vladimir, Summerfield, Alex, Clark, Nicholas, Z'olyomi, Viktor, Graham, Abigail, Yelgel, Celal, Magorrian, Samuel, Zhou, Mingwei, Zultak, Johanna, Hopkinson, David, Barinov, Alexei, Bointon, Thomas, Kretinin, Andrey, Wilson, Neil R., Beton, Peter H., Fal'ko, Vladimir I., Haigh, Sarah J., Gorbachev, Roman
Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of adjacent at
Externí odkaz:
http://arxiv.org/abs/1911.12664
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