Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Enaldiev, V V"'
Autor:
Enaldiev, V. V.
We develop a theory for long wavelength phonons originating at dislocations separating domains in small-angle twisted homobilayers of 2D materials such as graphene and MX$_2$ transition metal dichalcogenides (M=Mo,W; X=S,Se). We find that both partia
Externí odkaz:
http://arxiv.org/abs/2409.04166
Autor:
Barrier, Julien, Kim, Minsoo, Kumar, Roshan Krishna, Xin, Na, Kumaravadivel, P., Hague, Lee, Nguyen, E., Berdyugin, A. I., Moulsdale, Christian, Enaldiev, V. V., Prance, J. R., Koppens, F. H. L., Gorbachev, R. V., Watanabe, K., Taniguchi, T., Glazman, L. I., Grigorieva, I. V., Fal'ko, V. I., Geim, A. K.
Publikováno v:
Nature 628, 741-745 (2024)
Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been
Externí odkaz:
http://arxiv.org/abs/2402.14451
Autor:
Enaldiev, V. V.
Publikováno v:
2D Materials. 11 035014 (2024)
Long-period moir\'e superlattices at the twisted interface of van der Waals heterostructures relax into preferential-stacking domains separated by dislocation networks. Here, we develop a mesoscale theory for dislocations in the networks formed in tw
Externí odkaz:
http://arxiv.org/abs/2312.04104
Publikováno v:
Academia Nano: Science, Materials, Technology, volume 1, no. 1 (2024)
Boundaries between structural twins of bilayer graphene (so-called AB/BA domain walls) are often discussed in terms of the formation of topologically protected valley-polarised chiral states. Here, we show that, depending on the width of the AB/BA bo
Externí odkaz:
http://arxiv.org/abs/2307.14293
Lattice relaxation in twistronic bilayers with close lattice parameters and almost perfect crystallographic alignment of the layers results in the transformation of moir\'e pattern into a sequence of preferential stacking domains and domain wall netw
Externí odkaz:
http://arxiv.org/abs/2305.12848
The creation of moir\'e superlattices in twisted bilayers of two-dimensional crystals has been utilised to engineer quantum material properties in graphene and transition metal dichalcogenide (TMD) semiconductors. Here, we examine the structural rela
Externí odkaz:
http://arxiv.org/abs/2212.06728
Publikováno v:
npj 2D Mater Appl 6, 74 (2022)
Moir\'e superlattices in twistronic heterostructures are a powerful tool for materials engineering. In marginally twisted (small misalignment angle, $\theta$) bilayers of nearly lattice-matched two-dimensional (2D) crystals moir\'e patterns take the
Externí odkaz:
http://arxiv.org/abs/2204.06823
Publikováno v:
Phys. Rev. B 104, 195435 (2021)
Near-gate plasmons are a new type of plasma oscillations emerging in homogeneous two-dimensional electron systems where a gate provides partial screening of electron-electron interaction. Here we develop a theory of the near-gate plasmons in van der
Externí odkaz:
http://arxiv.org/abs/2111.10156
Publikováno v:
Nano Letters (2022)
Moir\'e structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for
Externí odkaz:
http://arxiv.org/abs/2111.00896
Autor:
Magorrian, S. J., Enaldiev, V. V., Zólyomi, V., Ferreira, Fábio, Fal'ko, Vladimir I., Ruiz-Tijerina, David A.
Publikováno v:
Phys. Rev. B 104, 125440 (2021)
Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moir\'e potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybr
Externí odkaz:
http://arxiv.org/abs/2106.06058