Zobrazeno 1 - 10
of 18
pro vyhledávání: '"En-Jun Zhu"'
Autor:
Mi Chen, Fang-Jiong Huang, Qiang Wu, Yi-Xi Zou, En-Jun Zhu, Jin-Wei Zhang, Yuan Zhou, Jian-Bo Yu, Ke-Qiang Cai, Bo Han, Qiang Shi
Publikováno v:
Chinese Medical Journal, Vol 132, Iss 3, Pp 377-378 (2019)
Externí odkaz:
https://doaj.org/article/bbe3ecb7e53549b39ef9284e1dfb1c42
Publikováno v:
PLoS ONE, Vol 9, Iss 10, p e109614 (2014)
In-stent restenosis (ISR) remains a common life-threatening complication and some studies have shown that pioglitazone can reduce the incidence of ISR in patients with drug-eluting stents (DES) implantation. We conducted a meta-analysis to assess the
Externí odkaz:
https://doaj.org/article/708c7ce98ad34c60b749f6191e36bc23
Publikováno v:
PLoS ONE, Vol 9, Iss 4, p e95463 (2014)
BACKGROUND: Numerous studies have evaluated the association between the apolipoprotein E (apoE) gene polymorphisms in coronary heart disease (CHD). However, the results remain uncertain. We carried out a meta-analysis to derive a more comprehensive e
Externí odkaz:
https://doaj.org/article/8f29f51467f84b83b6b31f5c00ecaf87
Publikováno v:
PLoS ONE, Vol 9, Iss 4, p e95463 (2014)
PLoS ONE
PLoS ONE
Background Numerous studies have evaluated the association between the apolipoprotein E (apoE) gene polymorphisms in coronary heart disease (CHD). However, the results remain uncertain. We carried out a meta-analysis to derive a more comprehensive es
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9e60c13aa64e9f10a1eec5d4a700168
http://europepmc.org/articles/PMC3995769?pdf=render
http://europepmc.org/articles/PMC3995769?pdf=render
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 100:65-68
A structure that consists of a semi-insulating layer over a buried n+ layer ( SI n + ) has been obtained by MeV Si+ implantation into SI-GaAs substrate and subsequently tailored by a very low dose O+ implantation. This novel structure has been studie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a69757e5adbfd5599cf98b9a2a6bbd8
https://doi.org/10.1016/0168-583x(95)00191-3
https://doi.org/10.1016/0168-583x(95)00191-3
Si/a-Si:H heterojunction microwave bipolar transistors with cut-off frequencies f/sub t/ above 5 GHz
Autor:
Cheng-Kun Xiong, Kun-Chun Mao, Jian-Yuan Wang, Xiao-Ming Zhang, En-Jun Zhu, Wen-Wei Sheng, Yin-Sheng Wang
Publikováno v:
IEEE Transactions on Electron Devices. 37:153-158
The fabrication of a silicon heterojunction microwave bipolar transistor with an n/sup +/ a-Si:H emitter is discussed, and experimental results are given. The device provides a base sheet resistance of 2 k Omega / Square Operator a base width 0.1 mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc5efd1da471a81c24555a89bb061ffa
https://doi.org/10.1109/16.43812
https://doi.org/10.1109/16.43812
Publikováno v:
IEEE Photonics Technology Letters. 9:1391-1393
An avalanche enhanced AlGaAs-GaAs punchthrough heterojunction phototransistor with an improved guard-ring emitter structure has been proposed. It has demonstrated a record high sensitivity of 5790 A/W and optical conversion gain of 10810 at 400-nW in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d935fd1db671c3a36747523816f96c72
https://doi.org/10.1109/68.623273
https://doi.org/10.1109/68.623273
Publikováno v:
1994 IEEE Hong Kong Electron Devices Meeting.
A structure that consists of a semi-insulating layer over a buried n/sup +/ layer (SI/n/sup +/) has been obtained by MeV Si/sup +/ implantation into SI-GaAs substrates and subsequently tailored by a very low dose O/sup +/ implantation. This novel str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d952835c043d4c0fc3eee8d0dbb47aa8
https://doi.org/10.1109/hkedm.1994.395130
https://doi.org/10.1109/hkedm.1994.395130
Publikováno v:
PLoS ONE, Vol 9, Iss 10, p e109614 (2014)
PLoS ONE
PLoS ONE
Background In-stent restenosis (ISR) remains a common life-threatening complication and some studies have shown that pioglitazone can reduce the incidence of ISR in patients with drug-eluting stents (DES) implantation. We conducted a meta-analysis to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd8748d6202afabe210f58852348e12f
https://doi.org/10.1371/journal.pone.0109614
https://doi.org/10.1371/journal.pone.0109614
Publikováno v:
1994 IEEE Hong Kong Electron Devices Meeting; 1994, p58-61, 4p