Upheaval of Negative Dielectric Permittivity and Semiconductor to Metallic Transition in a Thermally Induced Sn-Doped β-Ga 2 O 3 (-201) Single Crystal.

Autor: Karmakar S; Electrical Engineering, Ingram School of Engineering, Texas State University, San Marcos, Texas 78666, United States., Shiam IF; Electrical Engineering, Ingram School of Engineering, Texas State University, San Marcos, Texas 78666, United States., Manikanthababu N; Electrical Engineering, Ingram School of Engineering, Texas State University, San Marcos, Texas 78666, United States., Emu IH; Electrical Engineering, Ingram School of Engineering, Texas State University, San Marcos, Texas 78666, United States., Droopad R; Electrical Engineering, Ingram School of Engineering, Texas State University, San Marcos, Texas 78666, United States.; Materials Science, Engineering & Commercialization Program, Texas State University, San Marcos, Texas 78666, United States., Haque A; Electrical Engineering, Ingram School of Engineering, Texas State University, San Marcos, Texas 78666, United States.; Materials Science, Engineering & Commercialization Program, Texas State University, San Marcos, Texas 78666, United States.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Sep 11; Vol. 16 (36), pp. 48488-48501. Date of Electronic Publication: 2024 Aug 31.