Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Emtsev, Konstantin"'
Autor:
Coletti, Camilla, Forti, Stiven, Principi, Alessandro, Emtsev, Konstantin V., Zakharov, Alexei A., Daniels, Kevin M., Daas, Biplob K., Chandrashekhar, M. V. S., Ouisse, Thierry, Chaussende, Didier, MacDonald, Allan H., Polini, Marco, Starke, Ulrich
Publikováno v:
Phys. Rev. B 88, 155439 (2013)
In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported.
Externí odkaz:
http://arxiv.org/abs/1402.7177
Autor:
Goler, Sarah, Coletti, Camilla, Piazza, Vincenzo, Pingue, Pasqualantonio, Colangelo, Francesco, Pellegrini, Vittorio, Emtsev, Konstantin V., Forti, Stiven, Starke, Ulrich, Beltram, Fabio, Heun, Stefan
Publikováno v:
Carbon 51 (2013) 249
On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon-rich interface layer (hereafter called the buffer layer) which in par
Externí odkaz:
http://arxiv.org/abs/1111.4918
Autor:
Coletti, Camilla, Emtsev, Konstantin V., Zakharov, Alexei A., Ouisse, Thierry, Chaussende, Didier, Starke, Ulrich
Publikováno v:
Applied Physics Letters 99, 081904 (2011)
Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by
Externí odkaz:
http://arxiv.org/abs/1109.6240
Autor:
Bostwick, Aaron, McChesney, Jessica L., Emtsev, Konstantin, Seyller, Thomas, Horn, Karsten, Kevan, Stephan D., Rotenberg, Eli
Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwith small amounts of atomic hydrogen. We find the room temperature resis
Externí odkaz:
http://arxiv.org/abs/0904.2249
Autor:
McChesney, Jessica L., Bostwick, Aaron, Ohta, Taisuke, Emtsev, Konstantin, Seyller, Thomas, Horn, Karsten, Rotenberg, Eli
We present a self-consistent analysis of the photoemission spectral function A(k, w) of graphene monolayers grown epitaxially on SiC(0001). New information derived from spectral intensity anomalies (in addition to linewidths and peak positions) confi
Externí odkaz:
http://arxiv.org/abs/0809.4046
Autor:
Emtsev, Konstantin V., Bostwick, Aaron, Horn, Karsten, Jobst, Johannes, Kellogg, Gary L., Ley, Lothar, McChesney, Jessica L., Ohta, Taisuke, Reshanov, Sergey A., Rotenberg, Eli, Schmid, Andreas K., Waldmann, Daniel, Weber, Heiko B., Seyller, Thomas
We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer
Externí odkaz:
http://arxiv.org/abs/0808.1222
Autor:
Ohta, Taisuke, Gabaly, Farid El, Bostwick, Aaron, McChesney, Jessica, Emtsev, Konstantin V., Schmid, Andreas K., Seyller, Thomas, Horn, Karsten, Rotenberg, Eli
Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and an
Externí odkaz:
http://arxiv.org/abs/0710.0877
Autor:
Bostwick, Aaron, Ohta, Taisuke, McChesney, Jessica L., Emtsev, Konstantin V., Seyller, Thomas, Horn, Karsten, Rotenberg, Eli
Recently, it was demonstrated that the quasiparticle dynamics, the layer-dependent charge and potential, and the c-axis screening coefficient could be extracted from measurements of the spectral function of few layer graphene films grown epitaxially
Externí odkaz:
http://arxiv.org/abs/0705.3705
Autor:
McChesney, Jessica L., Bostwick, Aaron, Ohta, Taisuke, Emtsev, Konstantin V., Seyller, Thomas, Horn, Karsten, Rotenberg, Eli
The nature of the coupling leading to superconductivity in layered materials such as high-Tc superconductors and graphite intercalation compounds (GICs) is still unresolved. In both systems, interactions of electrons with either phonons or other elec
Externí odkaz:
http://arxiv.org/abs/0705.3264
Autor:
Goler, Sarah, Coletti, Camilla, Piazza, Vincenzo, Pingue, Pasqualantonio, Colangelo, Francesco, Pellegrini, Vittorio, Emtsev, Konstantin V., Forti, Stiven, Starke, Ulrich, Beltram, Fabio, Heun, Stefan
Publikováno v:
In Carbon January 2013 51:249-254
