Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Emre Armagan"'
Autor:
Mahjabin Maksud, Hannes Greve, Daniel Pantuso, Chetan Prasad, K. W. Park, Benjamin J. Orr, Peng Bai, I-chen Ho, Steven R. Novak, Zhizheng Zhang, D. Ingerly, Michael P. O'Day, Cheyun Lin, Enamul Kabir, Emre Armagan, Sunny Chugh, Patrick N. Stover, Lance C. Hibbeler, A. Schmitz, Hsinwei Wu
Publikováno v:
IRPS
This work presents silicon reliability characterization of Intel’s Foveros three-dimensional (3D) logic-on-logic stacking technology implemented on the 22FFL process node. Simulations and data demonstrate mechanical strain safe zones around Through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::689880d48e87d8e5dfb8a1916e08af40
https://doi.org/10.1109/irps45951.2020.9129277
https://doi.org/10.1109/irps45951.2020.9129277
Autor:
Benjamin J. Orr, Nathan Jack, C. Auth, A. Schmitz, Tony Acosta, Steven S. Poon, Che-Yun Lin, Abdur Rahman, C. AnDyke, Rahim Kasim, K. Downes, G. McPherson, Sunny Chugh, Madhavan Atul, D. Nminibapiel, Adam Neale, K. Sethi, Seung Hwan Lee, S. Ramey, Tanmoy Pramanik, Michael L. Hattendorf, Emre Armagan, J. Palmer, Subhash M. Joshi, Ian R. Post, C. M. Pelto, P. Nayak, Yeoh Andrew W, G. Martin, Gerald S. Leatherman, H. Wu, N. Seifert, A. Lowrie, R. Grover, H. Mao
Publikováno v:
IRPS
We provide a comprehensive overview of the reliability characteristics of Intel’s 10+ logic technology. This is a 10 nm technology featuring the third generation of Intel’s FinFETs, seventh generation of strained silicon, fifth generation of high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76e7a8286d09b3f3bfcb1c27f6a51e61
https://doi.org/10.1109/irps45951.2020.9128345
https://doi.org/10.1109/irps45951.2020.9128345
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
Peck's model for temperature-humidity-bias test correlation has been well studied and applied to estimate field failure at the use condition. The model postulates the effect of environment temperature and humidity to time-to-failure at stress or at u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c57cbfc0edf0fa4a15a3850f24725af
https://doi.org/10.1109/irps.2017.7936295
https://doi.org/10.1109/irps.2017.7936295
Stochastic pooling problem for natural gas production network design and operation under uncertainty
Publikováno v:
AIChE Journal. 57:2120-2135
Product quality and uncertainty are two important issues in the design and operation of natural gas production networks. This paper presents a stochastic pooling problem optimization formulation to address these two issues, where the qualities of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ee646b4145d46043b5fa68fbc3082e
https://doi.org/10.1002/aic.12419
https://doi.org/10.1002/aic.12419
Publikováno v:
IRPS
IC components are exposed to a variety of environmental effects in their usage environments. These include exposure to warm and humid ambient environments, sequences of power and temperature cycles as well as exposure to extreme hot and cold temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49f0ad3f9e6a4cb051b6713476ee529f
https://doi.org/10.1109/irps.2015.7112793
https://doi.org/10.1109/irps.2015.7112793
Publikováno v:
ACC
Scopus-Elsevier
Scopus-Elsevier
Product quality and uncertainty, e.g. of demand, quality etc., are two important issues in the long-term planning of natural gas production systems. This paper presents a stochastic pooling problem formulation to address these two issues, where the q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::292baf9ad40da53c5f0e04d107b98057
https://doi.org/10.1109/acc.2010.5531053
https://doi.org/10.1109/acc.2010.5531053