Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Emrah Birinci"'
Publikováno v:
Acta Crystallographica Section E, Vol 68, Iss 9, Pp o2633-o2633 (2012)
The title molecule, C30H24O4, lies about an inversion center located at the mid-point of the central C=C bond. The diphenylmethanone unit adopts an all-trans conformation. The dihedral angle between the adjacent rings is 53.57 (4)°.
Externí odkaz:
https://doaj.org/article/68664d8d96664a01a0e23d63f56e606b
Publikováno v:
Acta Crystallographica Section E, Vol 68, Iss 2, Pp o392-o392 (2012)
In the title compound, C23H21N3O, the dihedral angles formed by the mean plane of the triazole ring [maximum deviation = 0.007 (1) Å] and the three phenyl rings are 51.13 (8), 52.84 (8) and 47.04 (8)°. In the crystal, molecules are linked by weak C
Externí odkaz:
https://doaj.org/article/70a01746e52d4dff8fe6fc4dceaf9aa3
Autor:
Serkan Soylu, Murat Küçük, Emrah Birinci, Fatih Çelik, Kemal Sancak, Yasemin Ünver, Nesibe Arslan Burnaz
Publikováno v:
European Journal of Medicinal Chemistry. 84:639-650
SOYLU, SERKAN M/0000-0002-8440-1260; Burnaz, Nesibe Arslan/0000-0003-1163-4829 WOS: 000341464500059 PubMed: 25063946 Key compound 2-(4-amino-5-oxo-3-(thiophene-2-ylmethyl)-4,5-dihydro-1,2,4-tiazole-1-yl) acetohydrazide (3) was synthesized by reacting
Publikováno v:
ECS Transactions. 41:1-5
In this paper we report on a novel method to fabricate graphene transistors directly on oxidized silicon wafers without the need to transfer graphene. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown monolayer graphene field-e
Publikováno v:
ECS Transactions. 45:23-30
In this paper we report on transfer-free fabrication of bilayer graphene field effect transistors (BiLGFETs) on oxidized silicon wafers. By means of catalytic chemical vapor deposition CCVD) the in-situ grown BiLGFETs are realized directly on oxidize
We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown bilayer graphene transistors (BiLGFETs) are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7842ae0a769e1463f9842da1c57f77b
https://publica.fraunhofer.de/handle/publica/232301
https://publica.fraunhofer.de/handle/publica/232301
Publikováno v:
Advances in Science and Technology.
We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown monolayer graphene field-effect transistors
Publikováno v:
DTIS
In this paper we report on a novel method to fabricate graphene transistors directly on oxidized silicon wafers without the need to transfer graphene. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown bilayer graphene transisto
Autor:
EMRAH BİRİNCİ, FATİH ÇELİK, GÜLCAN KÖR, ESRA DÜĞDÜ, DİLEK ÜNLÜER, YASEMİN ÜNVER, KEMAL SANCAK
Publikováno v:
Turkish Journal of Chemistry.
We invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidized silicon a catalyst system of nanometer thin aluminum/nickel double
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ebfa6deb399cac1fda7d5c8b673161e
https://publica.fraunhofer.de/handle/publica/229298
https://publica.fraunhofer.de/handle/publica/229298