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Autor:
Adam R. Waite, Shanee Pacley, Emory Beck-Millerton, Andrey A. Voevodin, Jacob Brausch, Jianjun Hu, Al M. Hilton, Michael L. Jespersen
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 34:041505
Monolayer molybdenum disulfide (MoS2), a two dimensional semiconducting dichalcogenide material with a bandgap of 1.8–1.9 eV, has demonstrated promise for future use in field effect transistors and optoelectronics. Various approaches have been used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf641309d2df8404943d7a17096bec45
https://doi.org/10.1116/1.4952399
https://doi.org/10.1116/1.4952399
