Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Emmanuele Galluccio"'
Autor:
Justin D. Holmes, Ray Duffy, Ursel Bangert, Michele Conroy, John J. Boland, Jessica Doherty, Emmanuele Galluccio, Hugh G. Manning, Subhajit Biswas
Publikováno v:
ACS Applied Nano Materials
Ge1–xSnx nanowires incorporating a large amount of Sn would be useful for mobility enhancement in nanoelectronic devices, a definitive transition to a direct bandgap for application in optoelectronic devices and to increase the efficiency of the Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fe49587ac105c6605c00881b10f8f2b
https://doi.org/10.1021/acsanm.0c02569
https://doi.org/10.1021/acsanm.0c02569
Publikováno v:
ECS Transactions. 97:63-74
The semiconductor industry has been based on Si device scaling for many decades. The motivation for scaling Si is well known, as the reduced dimensions can lead to increased field-effect transistor (FET) device (logic) performance with lower power co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7035bc637cf5b856360e6b951d22f5fc
https://doi.org/10.1149/09703.0063ecst
https://doi.org/10.1149/09703.0063ecst
Autor:
Daris Fontana, Francesco Sgarbossa, Ruggero Milazzo, Enrico Di Russo, Emmanuele Galluccio, Davide De Salvador, Ray Duffy, Enrico Napolitani
Publikováno v:
SSRN Electronic Journal.
Ge1-xSnx alloys have attracted considerable attention for their promising electrical and optical properties. One of the main challenges for their successful implementation in devices concerns the fabrication of n-type heavily doped surface layers. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c1a06841c3fc6453fc127d2c156b006
https://doi.org/10.2139/ssrn.4086182
https://doi.org/10.2139/ssrn.4086182
Autor:
Enrico Napolitani, Gioele Mirabelli, Emmanuele Galluccio, Ray Duffy, Michele Conroy, Alan Harvey
Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resistance stanogermanide contacts on Ge0.91Sn0.09 substrates. Three different metals (Ni, Pt, and Ti) were characterized using a wide laser energy density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a54209a5bea2fec0a9401698b2d5f2df
http://hdl.handle.net/11577/3349923
http://hdl.handle.net/11577/3349923
Autor:
Eoin P. O'Reilly, Jessica Doherty, Justin D. Holmes, Subhajit Biswas, Christopher A. Broderick, Adria Garcia-Gil, Emmanuele Galluccio, Ray Duffy
Group IV alloys have attracted interest in the drive to create Si compatible, direct bandgap materials for implementation in complementary metal oxide semiconductor (CMOS) and beyond CMOS devices. The lack of a direct bandgap in Si and Ge hinders the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b37d85da512aedd33ecb674093efbdac
https://hdl.handle.net/10468/9897
https://hdl.handle.net/10468/9897
Ge1-xSnx alloys form a heterogeneous material system with high potential for applications in both optoelectronic and high-speed electronics devices. The attractiveness of Ge1-xSnx lies in the ability to tune the semiconductor band gap and electronic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87218a0196f90e4b614c70a08be7bc23
https://hdl.handle.net/10468/10149
https://hdl.handle.net/10468/10149
Autor:
Gioele Mirabelli, Justin D. Holmes, Jessica Doherty, Ray Duffy, Emmanuele Galluccio, Shih-Va Lin, Fang-Liang Lu, Nikolay Petkov, Chee-Wee Liu
Publikováno v:
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
The aim of this work is to provide a systematic and comparative study on the material characteristics and electrical contact performance for a germanium-tin (GeSn) alloy with a high percentage of Sn (8%). Thin metal films (10 nm) of Nickel (Ni), Tita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db341dde61808e3a3035b3f8e530009f
https://doi.org/10.1109/eurosoi-ulis45800.2019.9041907
https://doi.org/10.1109/eurosoi-ulis45800.2019.9041907
Autor:
Brenda Long, Ray Duffy, Emmanuele Galluccio, Gioele Mirabelli, Paul K. Hurley, Justin D. Holmes, Noel Kennedy
Publikováno v:
2018 18th International Workshop on Junction Technology (IWJT).
To maintain electron device scaling, in recent years the semiconductor industry has been forced to move from planar to non-planar thin-body electron device architectures. This alone has created the need to develop a radically new, non-destructive, co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a58ebcd5a77c1f2317e86166be51f0b4
https://doi.org/10.1109/iwjt.2018.8330294
https://doi.org/10.1109/iwjt.2018.8330294
Autor:
Chee-Wee Liu, Justin D. Holmes, Jessica Doherty, Ray Duffy, Nikolay Petkov, Fang-Liang Lu, Gioele Mirabelli, Emmanuele Galluccio, Shih-Ya Lin
Publikováno v:
Thin Solid Films. 690:137568
In this article we provide a comparative and systematic study on contact formation for germanium-tin (GeSn) thin films containing a high percentage of Sn (8 at.%). 20 nm of Nickel (Ni), Titanium (Ti), or Platinum (Pt) was deposited on Ge0.92Sn0.08 la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::768b7f6060c7e9e938183b6a73292c35
https://doi.org/10.1016/j.tsf.2019.137568
https://doi.org/10.1016/j.tsf.2019.137568
Autor:
C. Hatem, G. Maxwell, Michael Schmidt, Emmanuele Galluccio, Nikolay Petkov, Alan Hydes, Brenda Long, K. Thomas, Noel Kennedy, D. O'Connell, Colin Lyons, Paul K. Hurley, Brendan Sheehan, Maeva Sultan, Gioele Mirabelli, James Connolly, Ray Duffy, Emanuele Pelucchi, Justin D. Holmes
Publikováno v:
Journal of Applied Physics. 124:045703
Dopant incorporation in Si can be done in situ during epitaxial growth, or ex situ for localised material modification from a variety of sources including ion, solid, liquid, or gas. Gas-phase doping has the advantage that it does not require a thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::905209412c16128a76b9f12ed6cefe57
https://doi.org/10.1063/1.5034213
https://doi.org/10.1063/1.5034213