Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Emmanuel Torres Rios"'
Autor:
Edmundo A. Gutierrez-D., Jairo Mendez-V., Julio C. Tinoco, Emmanuel Torres Rios, Oscar V. Huerta-G.
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 385-390 (2020)
We introduce experimental results of the I-V degradation characteristics of a Silicon SOI technology for RF applications when stressed under both; a 28 GHz and a DC stress input signals. Then we compare the effect of DC and RF stress on threshold vol
Externí odkaz:
https://doaj.org/article/3f4f5d9d46844d6fb9f37ea808ca3b65
Autor:
Jesus Anselmo Fortoul-Diaz, Froylan Cortes-Santacruz, Daniel Perez-Rojas, Emmanuel Torres-Rios, Luis Antonio Carrillo-Martinez
Publikováno v:
2021 4th International Conference on Education Technology Management.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b61ec3a1b734376aaf3ce86dcfd4f59
https://doi.org/10.1145/3510309.3510327
https://doi.org/10.1145/3510309.3510327
Publikováno v:
Analog Integrated Circuits and Signal Processing. 82:81-88
In this paper, a new design for an impulse radar Ultra-wideband (UWB) module transmitter using a 180 nm CMOS TSMC process is presented. A 2nd order derivative Gaussian pulse is generated using two phase detectors, which consist of an n-latch and a p-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed41d38355d455c6bca21d408efff922
https://doi.org/10.1007/s10470-014-0443-5
https://doi.org/10.1007/s10470-014-0443-5
Autor:
Emmanuel Torres Rios, Thiago Ferauche, Luiz Carlos Moreira, Guilherme A. Novaes, Jose Fontebasso Neto
Publikováno v:
LASCAS
A new circuit technique, the reconfigurable puise generator circuit is proposed to produce a puise width inversely proportional to the spectrum power bandwidth in the Impulse Radio Ultra-Wide Band (IR-UWB) circuits. The complete circuit was based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::446c66434eee8908235a3eb4429e8071
https://doi.org/10.1109/lascas.2017.7948096
https://doi.org/10.1109/lascas.2017.7948096
Publikováno v:
IEEE Transactions on Electron Devices. 60:1288-1291
A method for characterizing low-voltage-operating MOSFETs through small-signal S-parameters is introduced. The method allows extracting the drain-to-source channel resistance at zero drain-to-source voltage, which is not feasible with dc conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ae06e83ffd90a7bd25ff44c2cc01f01
https://doi.org/10.1109/ted.2013.2243150
https://doi.org/10.1109/ted.2013.2243150
Publikováno v:
Solid-State Electronics. 53:145-149
A procedure to analyze the effect of the MOSFET drain-bulk junction tunneling current at high frequencies is presented. This procedure allows identifying the presence of band-to-band tunneling in short channel-length MOSFETs at different drain-to-sou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55c9c182612735347e7b67821e5af2ee
https://doi.org/10.1016/j.sse.2008.10.011
https://doi.org/10.1016/j.sse.2008.10.011
Autor:
Reydezel Torres-Torres, Emmanuel Torres-Rios, Edmundo A. Gutierrez-D, Roberto S. Murphy-Arteaga
Publikováno v:
International Journal of High Speed Electronics and Systems. 18:793-803
A new modeling and parameter extraction methodology to represent the parasitic effects associated with shielded test structures is presented in this paper. This methodology allows to accurately account for the undesired effects introduced by the test
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19bc312e841e427b907da89492f22616
https://doi.org/10.1142/s0129156408005771
https://doi.org/10.1142/s0129156408005771
Publikováno v:
IEEE Transactions on Electron Devices. 53:571-573
An S-parameter measurement-based procedure for the extraction of the bias dependent and bias independent components of the MOSFET series resistance is presented. The proposed procedure allows the direct and analytical determination of these component
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e7d2f53545f5bff620cdec48a603038
https://doi.org/10.1109/ted.2006.870328
https://doi.org/10.1109/ted.2006.870328
Publikováno v:
LASCAS
In this paper, a new design for an Impulse Radar UWB transmitter using an 180nm CMOS process is presented. A 2nd order derivative Gaussian pulse is generated using two Phase Detectors (PDs), which consist of an n-latch and a p-latch to generate a sin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190df41d015a7ac0082df2ffae38f83c
https://doi.org/10.1109/lascas.2013.6519077
https://doi.org/10.1109/lascas.2013.6519077
Publikováno v:
LASCAS
A comparison of Y-parameters and S-parameters methodologies for the calculus of the quality factor (Q) in integrated inductors, is analyzed in this paper. For this reason two inductors are compared, one with low (planar inductor) and another with hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ad32799b46e0703015262b90be7af5e
https://doi.org/10.1109/lascas.2013.6519070
https://doi.org/10.1109/lascas.2013.6519070