Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Emmanuel Paire"'
Autor:
Franck Julien, Pascal Masson, Jean-Michel Portal, Arnaud Regnier, L. Lopez, Eric Denis, Jacques Sonzogni, Loic Welter, J. Innocenti, Emmanuel Paire, Stephan Niel, Karen Labory
Publikováno v:
MWSCAS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29bff9a562ae5b31cbe3d17012133c09
https://doi.org/10.1109/mwscas.2014.6908560
https://doi.org/10.1109/mwscas.2014.6908560
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
A specific issue based on fluorine interaction on SiCN and SiOC layers is presented in this paper. Beyond this issue, the main subject of this paper is to show how this issue can be detected. A fault detection program monitors the deposition process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bef0c461d26d7a1c4dde3b7cc162bc4d
https://doi.org/10.1109/asmc.2014.6846989
https://doi.org/10.1109/asmc.2014.6846989
Autor:
Arnaud Belfy, Guillaume Pellegrin, Catherine Grosjean, Patrice Laurens, Nicolas Pic, Emmanuel Paire
Publikováno v:
2012 SEMI Advanced Semiconductor Manufacturing Conference.
This paper presents results obtained recently during the qualification of a Rapid Thermal Oxidation (RTO) process tool. Indeed, we have faced several issues that we managed to troubleshoot with inline non-contact electrical measurements, Surface Phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3e56b39b1de4a1e96c7b377902aa10d
https://doi.org/10.1109/asmc.2012.6212887
https://doi.org/10.1109/asmc.2012.6212887
Autor:
Nicolas Pic, Gennadi Polisski, Emmanuel Paire, Véronique Rizzo, Catherine Grosjean, Benjamin Bortolotti, John D’Amico, Nicolas Cabuil, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald, Alain C. Diebold
Publikováno v:
AIP Conference Proceedings.
The continuous race to reduce the dimensions of IC components has lead to the introduction of Nitrogen in the thin gate oxide layer in order to increase the dielectric constant and to improve the gate dielectric properties. It is mandatory to apply i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73173d355b24f72dc9de982f60cb59c0
https://doi.org/10.1063/1.3251245
https://doi.org/10.1063/1.3251245